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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00390686%21RIV13-GA0-68378271
rdf:type
n5:Vysledek skos:Concept
dcterms:description
The atomic and electronic structures of the polar GaN(000-1) surface were investigated by x-ray photoelectron diffraction (XPD) and ab initio density-functional theory (DFT) calculations. A well-ordered GaN(000-1) surface of a free-standing GaN wafer was prepared by sample annealing in a NH3 atmosphere. A N-terminated bare (1 x1) structure was confirmed. An electronic band structure was investigated by DFT calculations. The surface state at the top of the valence band was localized for a relaxed (1x1) structure. The energy loss function (ELF) was computed in the framework of the many-body perturbation theory. Plasmon loss peak positions were found to be in good agreement with reflection-electron energy loss spectroscopy (REELS) measurements. The atomic and electronic structures of the polar GaN(000-1) surface were investigated by x-ray photoelectron diffraction (XPD) and ab initio density-functional theory (DFT) calculations. A well-ordered GaN(000-1) surface of a free-standing GaN wafer was prepared by sample annealing in a NH3 atmosphere. A N-terminated bare (1 x1) structure was confirmed. An electronic band structure was investigated by DFT calculations. The surface state at the top of the valence band was localized for a relaxed (1x1) structure. The energy loss function (ELF) was computed in the framework of the many-body perturbation theory. Plasmon loss peak positions were found to be in good agreement with reflection-electron energy loss spectroscopy (REELS) measurements.
dcterms:title
Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface
skos:prefLabel
Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface Atomic and electronic structure of N-terminated GaN(0001) (1 1) surface
skos:notation
RIV/68378271:_____/12:00390686!RIV13-GA0-68378271
n5:predkladatel
n15:ico%3A68378271
n3:aktivita
n10:Z n10:P
n3:aktivity
P(GPP204/10/P028), Z(AV0Z10100521)
n3:cisloPeriodika
1
n3:dodaniDat
n14:2013
n3:domaciTvurceVysledku
Romanyuk, Olexandr n8:3420868
n3:druhVysledku
n13:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
124019
n3:idVysledku
RIV/68378271:_____/12:00390686
n3:jazykVysledku
n20:eng
n3:klicovaSlova
clean surfaces; GaN; photoelectron diffraction; REELS; ab initio DFT; optical response
n3:klicoveSlovo
n6:REELS n6:clean%20surfaces n6:photoelectron%20diffraction n6:optical%20response n6:ab%20initio%20DFT n6:GaN
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[6F333F3BB29F]
n3:nazevZdroje
Journal of Physics: Conference Series
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
3
n3:projekt
n17:GPP204%2F10%2FP028
n3:rokUplatneniVysledku
n14:2012
n3:svazekPeriodika
398
n3:tvurceVysledku
Romanyuk, Olexandr Paskova, T. Jiříček, Petr
n3:wos
000314465000013
n3:zamer
n19:AV0Z10100521
s:issn
1742-6588
s:numberOfPages
6
n18:doi
10.1088/1742-6596/398/1/012013