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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00389420%21RIV13-GA0-68378271
rdf:type
n16:Vysledek skos:Concept
dcterms:description
In this study, two common strategies of diamond film structuring are described. Main focus is on the comparison of top-down and the bottom-up strategies. The top-down strategy is primary related to dry reactive ion etching through masking materials (or even without mask), while bottom-up strategy is based on selective area deposition of diamond film. Several methods of both strategies are demonstrated in details in the article, regarding to their properties and basic principles. In this study, two common strategies of diamond film structuring are described. Main focus is on the comparison of top-down and the bottom-up strategies. The top-down strategy is primary related to dry reactive ion etching through masking materials (or even without mask), while bottom-up strategy is based on selective area deposition of diamond film. Several methods of both strategies are demonstrated in details in the article, regarding to their properties and basic principles.
dcterms:title
Structuring of diamond films by reactive ion plasma etching Structuring of diamond films by reactive ion plasma etching
skos:prefLabel
Structuring of diamond films by reactive ion plasma etching Structuring of diamond films by reactive ion plasma etching
skos:notation
RIV/68378271:_____/12:00389420!RIV13-GA0-68378271
n16:predkladatel
n20:ico%3A68378271
n3:aktivita
n10:P n10:Z
n3:aktivity
P(GAP108/11/0794), P(GAP108/12/0910), P(IAAX00100902), Z(AV0Z10100521)
n3:dodaniDat
n15:2013
n3:domaciTvurceVysledku
Ižák, Tibor n18:7465416
n3:druhVysledku
n4:D
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
171916
n3:idVysledku
RIV/68378271:_____/12:00389420
n3:jazykVysledku
n5:eng
n3:klicovaSlova
nanostructuring; diamond thin films; reactive ion etching; scanning electron microscopy
n3:klicoveSlovo
n9:nanostructuring n9:diamond%20thin%20films n9:scanning%20electron%20microscopy n9:reactive%20ion%20etching
n3:kontrolniKodProRIV
[C46DF1E9A657]
n3:mistoKonaniAkce
Praha
n3:mistoVydani
Praha
n3:nazevZdroje
Nanomateriály a nanotechnologie ve stavebnictví 2012 (NaNS 2012)
n3:obor
n11:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:projekt
n7:GAP108%2F12%2F0910 n7:IAAX00100902 n7:GAP108%2F11%2F0794
n3:rokUplatneniVysledku
n15:2012
n3:tvurceVysledku
Kromka, Alexander Ižák, Tibor Proška, J. Domonkos, M.
n3:typAkce
n17:CST
n3:zahajeniAkce
2012-09-11+02:00
n3:zamer
n8:AV0Z10100521
s:numberOfPages
6
n21:hasPublisher
České vysoké učení technické v Praze
n14:isbn
978-80-01-05132-0