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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00389331%21RIV13-AV0-68378271
rdf:type
skos:Concept n15:Vysledek
dcterms:description
Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. 5d-4f emission within 300–400 nm accompanied by weak 4f-4f emission in 480–650 nm were observed in Ga 0–60 at.% substituted samples. Only Pr3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr1%:Lu2Y1Ga2Al2O12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure. Pr: (Lu,Y)3(Ga,Al)5O12 single crystals were grown by the micro-pulling down (m-PD) method. Luminescence and scintillation properties were measured. The substitution phenomenon in the Lu3+ sites with Y3+ and Al3+ sites with Ga3+ in garnet structure has been studied. 5d-4f emission within 300–400 nm accompanied by weak 4f-4f emission in 480–650 nm were observed in Ga 0–60 at.% substituted samples. Only Pr3+ 4f-4f emission was observed in Ga 80 at.% substituted sample. The light yield of Pr1%:Lu2Y1Ga2Al2O12 sample was almost the same as that of Cz grown Pr:LuAG standard. Two-component scintillation decay of 17.9 ns (93%) and 68.0 ns (7%) were obtained using the PMT and digital oscilloscope TDS5032B. Slower decay components were reduced by Ga and Y substitution in LuAG structure.
dcterms:title
Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions
skos:prefLabel
Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions Improvement of scintillation properties in Pr doped Lu3Al5O12 scintillator by Ga and Y substitutions
skos:notation
RIV/68378271:_____/12:00389331!RIV13-AV0-68378271
n15:predkladatel
n16:ico%3A68378271
n3:aktivita
n17:Z
n3:aktivity
Z(AV0Z10100521)
n3:cisloPeriodika
5
n3:dodaniDat
n9:2013
n3:domaciTvurceVysledku
n10:1021508 n10:7547544
n3:druhVysledku
n6:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
140930
n3:idVysledku
RIV/68378271:_____/12:00389331
n3:jazykVysledku
n12:eng
n3:klicovaSlova
oxides; scintillator materials; scintillators; single crystal growth
n3:klicoveSlovo
n7:oxides n7:single%20crystal%20growth n7:scintillator%20materials n7:scintillators
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[960B54EDF8B9]
n3:nazevZdroje
IEEE Transactions on Nuclear Science
n3:obor
n14:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
9
n3:rokUplatneniVysledku
n9:2012
n3:svazekPeriodika
59
n3:tvurceVysledku
Yoshikawa, A. Nikl, Martin Tsutumi, K. Yanagida, T. Fukabori, A. Pejchal, Jan Endo, T. Kamada, K. Fujimoto, Y.
n3:wos
000310143300019
n3:zamer
n5:AV0Z10100521
s:issn
0018-9499
s:numberOfPages
5
n13:doi
10.1109/TNS.2012.2191621