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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00389312%21RIV13-GA0-68378271
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. 5d-4f emission within 520–530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively. Ce1%, 2% and 3% doped Gd3(Ga,Al)5O12 (GAGG) single crystals were grown by the Cz method. Luminescence and scintillation properties were measured. Light yield change along the growth direction and effects of Ce concentration on scintillation properties in Ce:GAGG were studied. 5d-4f emission within 520–530 nm was observed in the Ce:GAGG crystals. The Ce1%:GAGG sample with size 3x3x1mm showed the highest light yield of 46000 photon/MeV. The energy resolution was 7.8%@662 keV. With increasing solidification fraction, the LY were decreased. It is proposed that the increase of Ga concentration along the growth direction is the main cause of the decrease of LY. The scintillation decay times were accelerated with increasing Ce concentration in the Ce:GAGG crystals. The scintillation decay times were 92.0 ns, 79.1 ns and 68.3 ns in the Ce1, 2 and 3% GAGG, respectively.
dcterms:title
Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals
skos:prefLabel
Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals Crystal growth and scintillation properties of Ce doped Gd3(Ga,Al)5O12 single crystals
skos:notation
RIV/68378271:_____/12:00389312!RIV13-GA0-68378271
n13:predkladatel
n14:ico%3A68378271
n3:aktivita
n5:P n5:Z
n3:aktivity
P(GA202/08/0893), Z(AV0Z10100521)
n3:cisloPeriodika
5
n3:dodaniDat
n6:2013
n3:domaciTvurceVysledku
n15:7547544 n15:1021508
n3:druhVysledku
n19:J
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
129118
n3:idVysledku
RIV/68378271:_____/12:00389312
n3:jazykVysledku
n20:eng
n3:klicovaSlova
crystals; luminescence; solid scintillation detectors
n3:klicoveSlovo
n4:solid%20scintillation%20detectors n4:luminescence n4:crystals
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[637F81F9344D]
n3:nazevZdroje
IEEE Transactions on Nuclear Science
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
9
n3:projekt
n16:GA202%2F08%2F0893
n3:rokUplatneniVysledku
n6:2012
n3:svazekPeriodika
59
n3:tvurceVysledku
Fujimoto, Y. Fukabori, A. Yanagida, T. Yoshikawa, A. Endo, T. Pejchal, Jan Nikl, Martin Kamada, K. Tsutumi, K.
n3:wos
000310143300015
n3:zamer
n10:AV0Z10100521
s:issn
0018-9499
s:numberOfPages
4
n12:doi
10.1109/TNS.2012.2197024