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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00386854%21RIV13-AV0-68378271
rdf:type
n15:Vysledek skos:Concept
dcterms:description
Microcrystalline silicon (μc-Si:H) thin films were studied by photo-conductive atomic force microscopy (PC-AFM) under top side illumination by HeCd 442 nm laser and/or by scattered light of AFM detection diode. In order to make the top side illumination possible, so called “nose type cantilevers, with the tip at the end of cantilever, were used for local photo-current map measurements. Local current intensity under different illumination is discussed mainly from a point of view of the absorption depth of the used light. Diffusion length of charge carriers 300 nm was estimated from comparison of the current levels under different illumination. Microcrystalline silicon (μc-Si:H) thin films were studied by photo-conductive atomic force microscopy (PC-AFM) under top side illumination by HeCd 442 nm laser and/or by scattered light of AFM detection diode. In order to make the top side illumination possible, so called “nose type cantilevers, with the tip at the end of cantilever, were used for local photo-current map measurements. Local current intensity under different illumination is discussed mainly from a point of view of the absorption depth of the used light. Diffusion length of charge carriers 300 nm was estimated from comparison of the current levels under different illumination.
dcterms:title
Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy
skos:prefLabel
Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy Local photoconductivity of microcrystalline silicon thin films excited by 442 nm HeCd laser measured by conductive atomic force microscopy
skos:notation
RIV/68378271:_____/12:00386854!RIV13-AV0-68378271
n15:predkladatel
n20:ico%3A68378271
n3:aktivita
n12:Z n12:P
n3:aktivity
P(KAN400100701), P(LC06040), P(MEB061012), Z(AV0Z10100521)
n3:cisloPeriodika
17
n3:dodaniDat
n7:2013
n3:domaciTvurceVysledku
n14:6810756 n14:5056837 n14:2171449 n14:7483155 n14:3750299
n3:druhVysledku
n16:J
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
147312
n3:idVysledku
RIV/68378271:_____/12:00386854
n3:jazykVysledku
n18:eng
n3:klicovaSlova
amorphous and nanocrystalline silicon films; atomic force microscopy (AFM); local photoconductivity
n3:klicoveSlovo
n10:atomic%20force%20microscopy%20%28AFM%29 n10:local%20photoconductivity n10:amorphous%20and%20nanocrystalline%20silicon%20films
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[837162365CD8]
n3:nazevZdroje
Journal of Non-Crystalline Solids
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n17:KAN400100701 n17:LC06040 n17:MEB061012
n3:rokUplatneniVysledku
n7:2012
n3:svazekPeriodika
358
n3:tvurceVysledku
Fejfar, Antonín Ledinský, Martin Vetushka, Aliaksi Stuchlík, Jiří Kočka, Jan
n3:wos
000310394700037
n3:zamer
n5:AV0Z10100521
s:issn
0022-3093
s:numberOfPages
5
n19:doi
10.1016/j.jnoncrysol.2012.01.015