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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00386627%21RIV13-AV0-68378271
rdf:type
n19:Vysledek skos:Concept
dcterms:description
The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells. The rapid thermal direct deposition of micro-crystalline silicon (μc-Si) layers by atmospheric pressure chemical vapour deposition (APCVD) can be done on different intermediate layers. The deposition is done at temperatures between 850 °C and 1150 °C. A deposition rate of 1.6 μm/min has been achieved using standard process conditions. The microcrystalline structure changes depending on the deposition temperature and the layer thickness. Electron backscatter diffraction measurements show grain sizes of 0.5-10.0 μm with a columnar structure. Based on these process parameters and material properties the μc-Si layers have been simulated and optimised for two different solar cell concepts featuring different metallisation schemes and a comparison between epitaxial μc-Si emitter, diffused POCl3 emitter, and plasma enhanced chemical vapour deposition (PECVD) deposited a-Si heterojunction solar cells.
dcterms:title
µc-Si solar cells by direct deposition with APCVD µc-Si solar cells by direct deposition with APCVD
skos:prefLabel
µc-Si solar cells by direct deposition with APCVD µc-Si solar cells by direct deposition with APCVD
skos:notation
RIV/68378271:_____/12:00386627!RIV13-AV0-68378271
n19:predkladatel
n22:ico%3A68378271
n3:aktivita
n17:Z n17:P
n3:aktivity
P(7E10061), P(LM2011026), Z(AV0Z10100521)
n3:dodaniDat
n11:2013
n3:domaciTvurceVysledku
n20:5056837 n20:3750299
n3:druhVysledku
n21:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n23:predkladatel
n3:idSjednocenehoVysledku
129140
n3:idVysledku
RIV/68378271:_____/12:00386627
n3:jazykVysledku
n4:eng
n3:klicovaSlova
epitaxy; thin film solar cell; a-Si/µ-Si; microcrystalline silicon; Si film
n3:klicoveSlovo
n7:epitaxy n7:a-Si%2F%C2%B5-Si n7:Si%20film n7:thin%20film%20solar%20cell n7:microcrystalline%20silicon
n3:kontrolniKodProRIV
[4EEF8489576E]
n3:mistoKonaniAkce
Frankfurt
n3:mistoVydani
München
n3:nazevZdroje
Proceedings of the 27th European Photovoltaic Solar Energy Conference and Exhibition
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n13:7E10061 n13:LM2011026
n3:rokUplatneniVysledku
n11:2012
n3:tvurceVysledku
Ledinský, Martin Rachow, T. Fejfar, Antonín Reber, S. Janz, S.
n3:typAkce
n5:EUR
n3:zahajeniAkce
2012-09-24+02:00
n3:zamer
n12:AV0Z10100521
s:numberOfPages
7
n9:doi
10.4229/27thEUPVSEC2012-3CV.2.7
n14:hasPublisher
WIP Wirtschaft und Infrastruktur GmbH & Co Planungs KG
n8:isbn
3-936338-28-0