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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00377804%21RIV13-GA0-68378271
rdf:type
n10:Vysledek skos:Concept
dcterms:description
We present a new technique to measure component current-voltage (I-V) curves of individual sub-cells integrated in a monolithic multi-junction solar cell. This new approach, compared to all previously reported ones, is well suited for thin-film silicon p-i-n structures where the so-called shifting approximation, which supposes that illumination only shifts the I-V curve without changing its shape, is not valid. Moreover, the proposed method is particularly resistant to problems related to electrical shunts. The principle of this method lies in coupling the level of a selective light bias with the level of measured electrical current in order to fix the voltage of a selected sub-cell while sweeping over the current axis. When one of the sub-cells has a fixed voltage, it is then possible to get the I-V characteristics of the second one, shifted by a fixed voltage value. This measurement procedure is simple and requires no modeling. We present a new technique to measure component current-voltage (I-V) curves of individual sub-cells integrated in a monolithic multi-junction solar cell. This new approach, compared to all previously reported ones, is well suited for thin-film silicon p-i-n structures where the so-called shifting approximation, which supposes that illumination only shifts the I-V curve without changing its shape, is not valid. Moreover, the proposed method is particularly resistant to problems related to electrical shunts. The principle of this method lies in coupling the level of a selective light bias with the level of measured electrical current in order to fix the voltage of a selected sub-cell while sweeping over the current axis. When one of the sub-cells has a fixed voltage, it is then possible to get the I-V characteristics of the second one, shifted by a fixed voltage value. This measurement procedure is simple and requires no modeling.
dcterms:title
Variable light biasing method to measure component I-V characteristics of multi-junction solar cells Variable light biasing method to measure component I-V characteristics of multi-junction solar cells
skos:prefLabel
Variable light biasing method to measure component I-V characteristics of multi-junction solar cells Variable light biasing method to measure component I-V characteristics of multi-junction solar cells
skos:notation
RIV/68378271:_____/12:00377804!RIV13-GA0-68378271
n10:predkladatel
n11:ico%3A68378271
n3:aktivita
n4:Z n4:P
n3:aktivity
P(GA202/09/0417), Z(AV0Z10100521)
n3:cisloPeriodika
8
n3:dodaniDat
n5:2013
n3:domaciTvurceVysledku
n7:8660565
n3:druhVysledku
n8:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
177007
n3:idVysledku
RIV/68378271:_____/12:00377804
n3:jazykVysledku
n12:eng
n3:klicovaSlova
current-voltage characteristics; multi-junction; p-i-n; light bias
n3:klicoveSlovo
n13:multi-junction n13:current-voltage%20characteristics n13:light%20bias n13:p-i-n
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[76D5CE6DCBC8]
n3:nazevZdroje
Solar Energy Materials and Solar Cells
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
5
n3:projekt
n20:GA202%2F09%2F0417
n3:rokUplatneniVysledku
n5:2012
n3:svazekPeriodika
103
n3:tvurceVysledku
Despeisse, M. Bonnet-Eymard, M. Holovský, Jakub Ballif, C. Boccard, M.
n3:wos
000306044300020
n3:zamer
n19:AV0Z10100521
s:issn
0927-0248
s:numberOfPages
6
n16:doi
10.1016/j.solmat.2012.04.014