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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F12%3A00377299%21RIV13-GA0-68378271
rdf:type
n4:Vysledek skos:Concept
dcterms:description
Structures with self assembled quantum dots were prepared by low pressure MOVPE using Stranski-Krastanow growth mode. One single layer of InAs QDs confined between thin GaAs layers was embedded in ternary AlGaAs material. GaAs buffer and capping layers were also used. QDs were detected by ballistic electron emission microscopy BEEM. Ballistic current IB through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy BEES characteristics IB-V were measured on individual QDs. Derivation dIB/dV corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electron p1-like state, one- and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined. Structures with self assembled quantum dots were prepared by low pressure MOVPE using Stranski-Krastanow growth mode. One single layer of InAs QDs confined between thin GaAs layers was embedded in ternary AlGaAs material. GaAs buffer and capping layers were also used. QDs were detected by ballistic electron emission microscopy BEEM. Ballistic current IB through QDs is much higher than outside of QDs, and QDs look like dark spots. Ballistic electron emission microscopy BEES characteristics IB-V were measured on individual QDs. Derivation dIB/dV corresponds to the density of states. Minima in the density of states are assigned to the positions of the quantum levels in the QD. The spectroscopic characteristics of individual QDs were examined. One-electron p1-like state, one- and two-electron ground states and excited two-electron states were found. The Coulomb interaction and exchange energies between two electrons in QDs were also determined.
dcterms:title
Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES
skos:prefLabel
Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES Direct measurement of quantum levels in InAs/GaAs QDs by BEEM / BEES
skos:notation
RIV/68378271:_____/12:00377299!RIV13-GA0-68378271
n4:predkladatel
n5:ico%3A68378271
n3:aktivita
n12:Z n12:P
n3:aktivity
P(GA202/09/0676), P(GAP102/10/1201), Z(AV0Z10100521), Z(AV0Z20670512)
n3:dodaniDat
n15:2013
n3:domaciTvurceVysledku
n8:7698542 n8:4824040 n8:6156142 n8:7895585 n8:7369123
n3:druhVysledku
n19:D
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
131424
n3:idVysledku
RIV/68378271:_____/12:00377299
n3:jazykVysledku
n21:eng
n3:klicovaSlova
quantum dots; InAs; GaAs; MOVPE; BEEM; BEES
n3:klicoveSlovo
n10:MOVPE n10:GaAs n10:BEEM n10:BEES n10:quantum%20dots n10:InAs
n3:kontrolniKodProRIV
[2BBC87409DF3]
n3:mistoKonaniAkce
Žilina
n3:mistoVydani
Košice
n3:nazevZdroje
17th Conference of Czech and Slovak Physicists Proceedings
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
7
n3:projekt
n16:GA202%2F09%2F0676 n16:GAP102%2F10%2F1201
n3:rokUplatneniVysledku
n15:2012
n3:tvurceVysledku
Walachová, Jarmila Vaniš, Jan Hospodková, Alice Pangrác, Jiří Oswald, Jiří Hulicius, Eduard Vyskočil, Jan
n3:typAkce
n20:EUR
n3:zahajeniAkce
2011-09-05+02:00
n3:zamer
n14:AV0Z20670512 n14:AV0Z10100521
s:numberOfPages
3
n17:hasPublisher
Slovak Physical Society
n22:isbn
978-80-970625-4-5