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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00374550%21RIV12-AV0-68378271
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss function is determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen. Polar GaN(000-1) (1x1), semipolar GaN(10-13) surfaces prepared in NH3 vapor, and their disordered counterparts are investigated by reflection electron energy loss spectroscopy (REELS) and low-energy electron diffraction. The electron energy loss function is determined from the REELS within the framework of the semiclassical approach. Good agreement between experimental and theoretical functions is achieved at all angles for the disordered GaN surfaces and for the ordered surfaces measured at a kinetic energy of 1000 eV. The agreement is worse for the crystals measured at 200 eV, which is explained by the coherent scattering contributions at low energies. The optical constants of the GaN surfaces are derived from the computed dielectric functions. The surface optical properties of a disordered GaN surface are found to be different from the GaN crystals. There are pronounced changes in the electronic band structure for disordered GaN due to the preferential sputtering of nitrogen.
dcterms:title
Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
skos:prefLabel
Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy Dielectric response functions of the (000-1), (10-13) GaN single crystalline and disordered surfaces studied by reflection electron energy loss spectroscopy
skos:notation
RIV/68378271:_____/11:00374550!RIV12-AV0-68378271
n9:predkladatel
n10:ico%3A68378271
n3:aktivita
n16:Z n16:P
n3:aktivity
P(GPP204/10/P028), Z(AV0Z10100521)
n3:cisloPeriodika
4
n3:dodaniDat
n15:2012
n3:domaciTvurceVysledku
n4:3420868 Romanyuk, Olexandr n4:6323472
n3:druhVysledku
n19:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
194512
n3:idVysledku
RIV/68378271:_____/11:00374550
n3:jazykVysledku
n5:eng
n3:klicovaSlova
GaN; REELS; optical constants; semiconductor surfaces
n3:klicoveSlovo
n11:optical%20constants n11:REELS n11:semiconductor%20surfaces n11:GaN
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[CF7BD1628FBE]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n20:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n6:GPP204%2F10%2FP028
n3:rokUplatneniVysledku
n15:2011
n3:svazekPeriodika
110
n3:tvurceVysledku
Zemek, Josef Jiříček, Petr Romanyuk, Olexandr Paskova, T. Tougaard, S.
n3:wos
000294484300027
n3:zamer
n17:AV0Z10100521
s:issn
0021-8979
s:numberOfPages
7
n18:doi
10.1063/1.3622674