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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00373625%21RIV12-AV0-68378271
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Detailed study of ultrafast stimulated emission arising from efficient quasidirect transitions in silicon nanocrystals under femtosecond pumping. In nanometer-sized silicon nanocrystals, the quasidirect transitions are rapidly cut off (on subpicosecond time scale) owing to surface trapping of carriers. Consequently, also the core-related radiative recombination undergoes ultrafast decay. We propose, theoretically describe, and experimentally demonstrate an extension of the commonly used variable stripe length (VSL) method, which enables us to measure transient stimulated emission even on the subpicosecond time scale. By applying the extended VSL method we reveal the presence of room-temperature transient optical gain in silicon nanocrystals (lifetime <1 ps) at wavelengths 590 nm with peak values of the order of 100 cm1. Finally, on the basis of our results we discuss possible ways of obtaining a laser source based on silicon nanocrystals. Detailed study of ultrafast stimulated emission arising from efficient quasidirect transitions in silicon nanocrystals under femtosecond pumping. In nanometer-sized silicon nanocrystals, the quasidirect transitions are rapidly cut off (on subpicosecond time scale) owing to surface trapping of carriers. Consequently, also the core-related radiative recombination undergoes ultrafast decay. We propose, theoretically describe, and experimentally demonstrate an extension of the commonly used variable stripe length (VSL) method, which enables us to measure transient stimulated emission even on the subpicosecond time scale. By applying the extended VSL method we reveal the presence of room-temperature transient optical gain in silicon nanocrystals (lifetime <1 ps) at wavelengths 590 nm with peak values of the order of 100 cm1. Finally, on the basis of our results we discuss possible ways of obtaining a laser source based on silicon nanocrystals.
dcterms:title
Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals
skos:prefLabel
Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals Ultrafast stimulated emission due to quasidirect transitions in silicon nanocrystals
skos:notation
RIV/68378271:_____/11:00373625!RIV12-AV0-68378271
n16:predkladatel
n17:ico%3A68378271
n3:aktivita
n19:Z n19:S n19:P
n3:aktivity
P(IAA101120804), P(KAN400100701), P(LC510), S, Z(AV0Z10100521), Z(MSM0021620834)
n3:cisloPeriodika
8
n3:dodaniDat
n9:2012
n3:domaciTvurceVysledku
n18:3718441 n18:9441034
n3:druhVysledku
n20:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
236662
n3:idVysledku
RIV/68378271:_____/11:00373625
n3:jazykVysledku
n5:eng
n3:klicovaSlova
silicon nanocrystals; optical gain; fast radiative recombination
n3:klicoveSlovo
n8:optical%20gain n8:fast%20radiative%20recombination n8:silicon%20nanocrystals
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[68D140A2207C]
n3:nazevZdroje
Physical Review. B
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
10
n3:projekt
n14:LC510 n14:KAN400100701 n14:IAA101120804
n3:rokUplatneniVysledku
n9:2011
n3:svazekPeriodika
84
n3:tvurceVysledku
Pelant, Ivan Žídek, Karel Little, R. Šiller, L. Oberlé, J. Gilliot, P. Horrocks, B. R. Trojánek, F. Malý, P. Hönerlage, B.
n3:wos
000294326200011
n3:zamer
n13:AV0Z10100521 n13:MSM0021620834
s:issn
1098-0121
s:numberOfPages
9
n4:doi
10.1103/PhysRevB.84.085321