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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00372183%21RIV12-AV0-68378271
rdf:type
n12:Vysledek skos:Concept
dcterms:description
An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon samples was studied through synchrotron white beam projection and section topography, enabling the evaluation of the strain field associated with the damages. The topographs indicated the existence of deformed field of cylindrical symmetry providing the dark contrast. It was also shown that some of the Bragg-case section images of spots in silicon correspond well to the simulated images of rod-like inclusions. An important problem in the experiments performed with the intense fourth generation X-ray sources is the damages of the examined samples caused by the high energy impact. The effect introduced by the beam from the FLASH source in crystalline silicon samples was studied through synchrotron white beam projection and section topography, enabling the evaluation of the strain field associated with the damages. The topographs indicated the existence of deformed field of cylindrical symmetry providing the dark contrast. It was also shown that some of the Bragg-case section images of spots in silicon correspond well to the simulated images of rod-like inclusions.
dcterms:title
X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses
skos:prefLabel
X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses X-ray topographic investigation of the deformation field around spots irradiated by FLASH single pulses
skos:notation
RIV/68378271:_____/11:00372183!RIV12-AV0-68378271
n12:predkladatel
n16:ico%3A68378271
n3:aktivita
n8:P n8:Z
n3:aktivity
P(GAP108/11/1312), P(IAAX00100903), P(KAN300100702), P(LA08024), P(LC510), P(LC528), P(ME10046), Z(AV0Z10100523)
n3:cisloPeriodika
10
n3:dodaniDat
n18:2012
n3:domaciTvurceVysledku
n10:6173047 n10:9517421 n10:3274713 n10:8434050 n10:2712679
n3:druhVysledku
n11:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
242004
n3:idVysledku
RIV/68378271:_____/11:00372183
n3:jazykVysledku
n15:eng
n3:klicovaSlova
silicon; FLASH irradiation; x-ray topography; deformation fields
n3:klicoveSlovo
n6:deformation%20fields n6:FLASH%20irradiation n6:silicon n6:x-ray%20topography
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[CAFB5DDF08FF]
n3:nazevZdroje
Radiation Physics and Chemistry
n3:obor
n4:BH
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
16
n3:projekt
n17:LA08024 n17:ME10046 n17:KAN300100702 n17:GAP108%2F11%2F1312 n17:LC510 n17:LC528 n17:IAAX00100903
n3:rokUplatneniVysledku
n18:2011
n3:svazekPeriodika
80
n3:tvurceVysledku
Wierzchowski, W. Zymierska, D. Vyšín, Luděk Sobierajski, R. Chalupský, Jaromír Burian, Tomáš Toleikis, S. Gaudin, J. Hájková, Věra Tiedtke, K. Wabnitz, H. Balcer, T. Klinger, D. Gleeson, A. J. Juha, Libor Wieteska, K.
n3:wos
000293424000008
n3:zamer
n14:AV0Z10100523
s:issn
0969-806X
s:numberOfPages
5
n13:doi
10.1016/j.radphyschem.2011.02.034