This HTML5 document contains 58 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n14http://linked.opendata.cz/resource/domain/vavai/projekt/
n5http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n19http://linked.opendata.cz/resource/domain/vavai/subjekt/
n6http://linked.opendata.cz/ontology/domain/vavai/
n12http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n18http://bibframe.org/vocab/
n4http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F11%3A00371379%21RIV12-AV0-68378271/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n9http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n20http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00371379%21RIV12-AV0-68378271
rdf:type
n6:Vysledek skos:Concept
dcterms:description
We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs0.87Sb0.13 SRL (type I heterojunction). We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs0.87Sb0.13 SRL (type I heterojunction).
dcterms:title
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
skos:prefLabel
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures
skos:notation
RIV/68378271:_____/11:00371379!RIV12-AV0-68378271
n6:predkladatel
n19:ico%3A68378271
n3:aktivita
n11:Z n11:P
n3:aktivity
P(GA202/09/0676), P(GAP102/10/1201), P(LC510), Z(AV0Z10100521), Z(MSM6840770014)
n3:cisloPeriodika
1
n3:dodaniDat
n20:2012
n3:domaciTvurceVysledku
n5:6156142 n5:4824040 n5:7698542 n5:7895585 n5:7369123 n5:4653416
n3:druhVysledku
n15:J
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
204581
n3:idVysledku
RIV/68378271:_____/11:00371379
n3:jazykVysledku
n17:eng
n3:klicovaSlova
low dimensional structures; photoluminescence; electroluminescence; low-pressure MOVPE; InAs/GaAs quantum dots; semiconducting III–V materials
n3:klicoveSlovo
n9:low-pressure%20MOVPE n9:low%20dimensional%20structures n9:InAs%2FGaAs%20quantum%20dots n9:electroluminescence n9:photoluminescence n9:semiconducting%20III%E2%80%93V%20materials
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[67A52E32395B]
n3:nazevZdroje
Journal of Crystal Growth
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
7
n3:projekt
n14:GAP102%2F10%2F1201 n14:LC510 n14:GA202%2F09%2F0676
n3:rokUplatneniVysledku
n20:2011
n3:svazekPeriodika
315
n3:tvurceVysledku
Oswald, Jiří Pangrác, Jiří Hazdra, P. Hulicius, Eduard Vyskočil, Jan Kuldová, Karla Hospodková, Alice
n3:wos
000287558400024
n3:zamer
n12:AV0Z10100521 n12:MSM6840770014
s:issn
0022-0248
s:numberOfPages
4
n18:doi
10.1016/j.jcrysgro.2010.09.041