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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00371190%21RIV12-AV0-68378271
rdf:type
skos:Concept n18:Vysledek
dcterms:description
Lu3Al5O12 (LuAG) films were grown from the BaO–B2O3–BaF2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr3+, Sc3+, and eventually still with Ce3+ ions. Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski-grown bulk LuAG:Pr single crystal was measured as a reference. The best performing epitaxial films had low Sc3+ concentration and appeared comparable or superior to the Czochralski-grown crystal in terms of photoelectron yield and relative intensity of the fast component of scintillation response. Lu3Al5O12 (LuAG) films were grown from the BaO–B2O3–BaF2 flux on LuAG and YAG substrates using the liquid phase epitaxy method (LPE). They were doped with Pr3+, Sc3+, and eventually still with Ce3+ ions. Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski-grown bulk LuAG:Pr single crystal was measured as a reference. The best performing epitaxial films had low Sc3+ concentration and appeared comparable or superior to the Czochralski-grown crystal in terms of photoelectron yield and relative intensity of the fast component of scintillation response.
dcterms:title
Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films
skos:prefLabel
Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films Scintillation properties of Sc-, Pr-, and Ce-doped LuAG epitaxial garnet films
skos:notation
RIV/68378271:_____/11:00371190!RIV12-AV0-68378271
n18:predkladatel
n19:ico%3A68378271
n3:aktivita
n7:Z n7:S n7:P
n3:aktivity
P(GA202/08/0893), S, Z(AV0Z10100521), Z(MSM0021620834), Z(MSM6840770040)
n3:cisloPeriodika
1
n3:dodaniDat
n15:2012
n3:domaciTvurceVysledku
n5:9692096 n5:1021508 n5:7173164 n5:8896054
n3:druhVysledku
n12:J
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
228315
n3:idVysledku
RIV/68378271:_____/11:00371190
n3:jazykVysledku
n11:eng
n3:klicovaSlova
energy resolution; photoelectron yield; LuAG:Pr; Sc codoped material; scintillator materials
n3:klicoveSlovo
n6:Sc%20codoped%20material n6:LuAG%3APr n6:photoelectron%20yield n6:energy%20resolution n6:scintillator%20materials
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[EC7D26DED0C4]
n3:nazevZdroje
Journal of Crystal Growth
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
8
n3:projekt
n17:GA202%2F08%2F0893
n3:rokUplatneniVysledku
n15:2011
n3:svazekPeriodika
318
n3:tvurceVysledku
Nikl, Martin Kučera, M. Průša, Petr Nitsch, Karel Čechák, T. Mareš, Jiří A. Hanuš, M. Onderišinová, Z.
n3:wos
000289653900115
n3:zamer
n13:MSM6840770040 n13:AV0Z10100521 n13:MSM0021620834
s:issn
0022-0248
s:numberOfPages
4
n16:doi
10.1016/j.jcrysgro.2010.10.046