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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00366372%21RIV12-AV0-68378271
rdf:type
n11:Vysledek skos:Concept
dcterms:description
We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain. We present an experimental and theoretical study of magnetocrystalline anisotropies in arrays of bars patterned lithographically into (Ga,Mn)As epilayers grown under compressive lattice strain.
dcterms:title
Strain control of magnetic anisotropy in (Ga,Mn)As microbars Strain control of magnetic anisotropy in (Ga,Mn)As microbars
skos:prefLabel
Strain control of magnetic anisotropy in (Ga,Mn)As microbars Strain control of magnetic anisotropy in (Ga,Mn)As microbars
skos:notation
RIV/68378271:_____/11:00366372!RIV12-AV0-68378271
n11:predkladatel
n12:ico%3A68378271
n3:aktivita
n14:P n14:Z
n3:aktivity
P(7E08087), P(GEFON/06/E002), P(KAN400100652), P(LC510), Z(AV0Z10100521)
n3:cisloPeriodika
11
n3:dodaniDat
n18:2012
n3:domaciTvurceVysledku
n8:1063138 n8:6309259 n8:2779129 n8:4173759 n8:5644275
n3:druhVysledku
n9:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
232463
n3:idVysledku
RIV/68378271:_____/11:00366372
n3:jazykVysledku
n15:eng
n3:klicovaSlova
ferromagnetic semiconductor microstructures; magnetic anisotropy
n3:klicoveSlovo
n5:ferromagnetic%20semiconductor%20microstructures n5:magnetic%20anisotropy
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[FE81E1463665]
n3:nazevZdroje
Physical Review. B
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
12
n3:projekt
n4:7E08087 n4:KAN400100652 n4:LC510 n4:GEFON%2F06%2FE002
n3:rokUplatneniVysledku
n18:2011
n3:svazekPeriodika
83
n3:tvurceVysledku
Novák, Vít Horák, L. Haigh, J. A Holý, V. Olejník, Kamil Irvine, A. Campion, R. P. King, C. S. Zemen, Jan Kučera, Jan Gallagher, B. L. Jungwirth, Tomáš
n3:wos
000288242800006
n3:zamer
n20:AV0Z10100521
s:issn
1098-0121
s:numberOfPages
12
n13:doi
10.1103/PhysRevB.83.115312