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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00364023%21RIV12-AV0-68378271
rdf:type
skos:Concept n14:Vysledek
dcterms:description
The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder. The symmetry and existence ranges of GaSb and AlSb (111) A and B surface reconstructions are investigated using azimuthal-scan reflection high-energy electron diffraction (ARHEED) in a molecular-beam-epitaxy (MBE)environment. ARHEED patterns of all reconstructions within the accessible MBE group V flux-substrate temperature parameter field are presented and analyzed. The transition borders are mapped out as a reference for future growth experiments. The experimental results are interpreted on the basis of general construction principles for (111) surfaces of III-V semiconductors. ARHEED allows the complete determination of the two-dimensional in-plane reciprocal lattice in a single, continuous measurement. This allows the unambiguous identification of the reconstructions on (111) surfaces where the intrinsic symmetry is masked by the 120 domain structure and possible disorder.
dcterms:title
Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
skos:prefLabel
Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction Analysis of GaSb and AlSb reconstructions on GaSb(111) A- and B-oriented surfaces by azimuthal-scan reflection high-energy electron diffraction
skos:notation
RIV/68378271:_____/11:00364023!RIV12-AV0-68378271
n14:predkladatel
n15:ico%3A68378271
n3:aktivita
n9:Z n9:P
n3:aktivity
P(GPP204/10/P028), Z(AV0Z10100521)
n3:cisloPeriodika
15
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
Romanyuk, Olexandr
n3:druhVysledku
n19:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
185661
n3:idVysledku
RIV/68378271:_____/11:00364023
n3:jazykVysledku
n13:eng
n3:klicovaSlova
III-V semiconductor surfaces; RHEED; surface reconstruction; MBE
n3:klicoveSlovo
n11:surface%20reconstruction n11:III-V%20semiconductor%20surfaces n11:RHEED n11:MBE
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[A1E5A0FA350A]
n3:nazevZdroje
Physical Review. B
n3:obor
n12:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:projekt
n17:GPP204%2F10%2FP028
n3:rokUplatneniVysledku
n10:2011
n3:svazekPeriodika
83
n3:tvurceVysledku
Grosse, F. Braun, W. Romanyuk, Olexandr Katmis, F. Riechert, H. Proessdorf, A.
n3:wos
000292149600006
n3:zamer
n6:AV0Z10100521
s:issn
1098-0121
s:numberOfPages
11
n7:doi
10.1103/PhysRevB.83.155317