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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00361428%21RIV13-AV0-68378271
rdf:type
n15:Vysledek skos:Concept
dcterms:description
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb1, which is twice the sLHC integrated luminosity goal. We are developing n+-in-p, p-bulk and n-readout, microstrip sensors, fabricated by Hamamatsu Photonics, as a non-inverting radiation hard silicon detector for the ATLAS tracker upgrade at the super-LHC (sLHC) proposed facility. The bulk radiation damage after neutron and proton irradiations is characterized with the leakage current, charge collection and full depletion voltage. The detectors should provide acceptable signal, signal-to-noise ratio exceeding 15, after the integrated luminosity of 6000 fb1, which is twice the sLHC integrated luminosity goal.
dcterms:title
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
skos:prefLabel
Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments
skos:notation
RIV/68378271:_____/11:00361428!RIV13-AV0-68378271
n15:predkladatel
n20:ico%3A68378271
n3:aktivita
n7:Z n7:P
n3:aktivity
P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)
n3:cisloPeriodika
1
n3:dodaniDat
n12:2013
n3:domaciTvurceVysledku
n10:4385675 n10:2177544
n3:druhVysledku
n11:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
234906
n3:idVysledku
RIV/68378271:_____/11:00361428
n3:jazykVysledku
n19:eng
n3:klicovaSlova
p-bulk silicon; microstrip; charge collection; radiation damage
n3:klicoveSlovo
n5:charge%20collection n5:p-bulk%20silicon n5:microstrip n5:radiation%20damage
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[4EE64FF2A213]
n3:nazevZdroje
Nuclear Instruments & Methods in Physics Research Section A
n3:obor
n14:BF
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
74
n3:projekt
n16:LA08032
n3:rokUplatneniVysledku
n12:2011
n3:svazekPeriodika
636
n3:tvurceVysledku
Hara, K. Mikeštíková, Marcela Böhm, Jan Casse, G. Betancourt, C. Bates, R. Affolder, A. A. Carter, J. R. Brown, H. Allport, P. P. Buttar, C.
n3:wos
000291416400015
n3:zamer
n4:AV0Z10100502 n4:MSM0021620859
s:issn
0168-9002
s:numberOfPages
7
n18:doi
10.1016/j.nima.2010.04.090