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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F11%3A00361427%21RIV13-AV0-68378271
rdf:type
n15:Vysledek skos:Concept
dcterms:description
We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip 1 kΩ, after the integrated luminosity of 6 ab1, which is twice the luminosity goal. We are developing n+-in-p, p-bulk and n-readout, microstrip sensors as a non-inverting radiation hard silicon detector for the ATLAS Tracker Upgrade at the super LHC experiment. The surface radiation damages of the sensors fabricated by Hamamatsu Photonics are characterized on the interstrip capacitance, interstrip resistance and punch-through protection evolution. The detector should provide acceptable strip isolation, exceeding the input impedance of the signal readout chip 1 kΩ, after the integrated luminosity of 6 ab1, which is twice the luminosity goal.
dcterms:title
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
skos:prefLabel
Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment
skos:notation
RIV/68378271:_____/11:00361427!RIV13-AV0-68378271
n15:predkladatel
n18:ico%3A68378271
n3:aktivita
n7:Z n7:P
n3:aktivity
P(LA08032), Z(AV0Z10100502), Z(MSM0021620859)
n3:cisloPeriodika
1
n3:dodaniDat
n12:2013
n3:domaciTvurceVysledku
n10:4385675 n10:2177544
n3:druhVysledku
n13:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
234924
n3:idVysledku
RIV/68378271:_____/11:00361427
n3:jazykVysledku
n19:eng
n3:klicovaSlova
p-bulk silicon; surface damage; charge collection; punch-through voltage
n3:klicoveSlovo
n4:p-bulk%20silicon n4:charge%20collection n4:punch-through%20voltage n4:surface%20damage
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[AD4BFB5F5EE2]
n3:nazevZdroje
Nuclear Instruments & Methods in Physics Research Section A
n3:obor
n14:BF
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
73
n3:projekt
n17:LA08032
n3:rokUplatneniVysledku
n12:2011
n3:svazekPeriodika
636
n3:tvurceVysledku
Mikeštíková, Marcela Böhm, Jan Casse, G. Bates, R. Lindgren, S. Affolder, A. A. Betancourt, C. Carter, J. R. Brown, H. Buttar, C. Allport, P. P.
n3:wos
000291416400019
n3:zamer
n6:AV0Z10100502 n6:MSM0021620859
s:issn
0168-9002
s:numberOfPages
7
n20:doi
10.1016/j.nima.2010.04.094