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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F10%3A00437497%21RIV15-AV0-68378271
rdf:type
skos:Concept n17:Vysledek
dcterms:description
The paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min. The paper reports on a reactive deposition of transparent SiO2 films with a low amount (<= 3 at.%) of Zr prepared from the molten target using the AC pulsed dual magnetron It is shown that the deposition rate a(D) of the transparent oxide film strongly increases at the critical target power density (W-t)(cr) when the solid target starts to melt and the magnetron operates with a molten target. In this case the evaporation of target material plays a dominant role in the reactive deposition of thin films This process is called the ionized magnetron evaporation Oxide films reactively deposited from the molten target are well transparent and highly elastic The maximum deposition rate of the transparent oxide film achieved in our experiments is 814 nm/min.
dcterms:title
High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
skos:prefLabel
High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target High-rate reactive deposition of transparent SiO2 films containing low amount of Zr from molten magnetron target
skos:notation
RIV/68378271:_____/10:00437497!RIV15-AV0-68378271
n4:aktivita
n9:Z n9:P
n4:aktivity
P(OC10045), Z(AV0Z10100520), Z(MSM4977751302)
n4:cisloPeriodika
2
n4:dodaniDat
n8:2015
n4:domaciTvurceVysledku
n5:9269606
n4:druhVysledku
n15:J
n4:duvernostUdaju
n11:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
261596
n4:idVysledku
RIV/68378271:_____/10:00437497
n4:jazykVysledku
n19:eng
n4:klicovaSlova
sputtering; evaporation; reactive deposition; target power density
n4:klicoveSlovo
n10:evaporation n10:target%20power%20density n10:reactive%20deposition n10:sputtering
n4:kodStatuVydavatele
CH - Švýcarská konfederace
n4:kontrolniKodProRIV
[C8970F9AC35C]
n4:nazevZdroje
Thin Solid Films
n4:obor
n12:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
3
n4:projekt
n14:OC10045
n4:rokUplatneniVysledku
n8:2010
n4:svazekPeriodika
519
n4:tvurceVysledku
Baroch, P. Musil, Jindřich Satava, V.
n4:wos
000284499500039
n4:zamer
n18:MSM4977751302 n18:AV0Z10100520
s:issn
0040-6090
s:numberOfPages
3
n16:doi
10.1016/j.tsf.2010.09.009