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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F10%3A00356926%21RIV11-MSM-68378271
rdf:type
n7:Vysledek skos:Concept
dcterms:description
We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation. We present a study of ultrafast carrier transfer from highly luminescent states inside the core of silicon nanocrystal (due to quasidirect transitions) to states on the nanocrystal-matrix interface. This transfer leads to a sub-picosecond luminescence decay, which is followed by a slower decay component induced by carrier relaxation to lower interface states. We investigate the luminescence dynamics for two different surface passivation types and we propose a general model describing spectral dependence of ultrafast carrier dynamics. Our results stress the crucial role of the energy distribution of the interface states on surface-related quenching of quasidirect luminescence in silicon nanocrystals. We discuss how to avoid this quenching in order to bring the attractive properties of the quasidirect recombination closer to exploitation.
dcterms:title
Femtosecond luminescence spectroscopy of core states in silicon nanocrystals Femtosecond luminescence spectroscopy of core states in silicon nanocrystals
skos:prefLabel
Femtosecond luminescence spectroscopy of core states in silicon nanocrystals Femtosecond luminescence spectroscopy of core states in silicon nanocrystals
skos:notation
RIV/68378271:_____/10:00356926!RIV11-MSM-68378271
n3:aktivita
n18:S n18:P n18:Z
n3:aktivity
P(IAA101120804), P(KAN400100701), P(LC510), S, Z(AV0Z10100521), Z(MSM0021620834)
n3:cisloPeriodika
24
n3:dodaniDat
n16:2011
n3:domaciTvurceVysledku
n5:9441034 n5:5943582 Ondič, Lukáš
n3:druhVysledku
n17:J
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
258963
n3:idVysledku
RIV/68378271:_____/10:00356926
n3:jazykVysledku
n15:eng
n3:klicovaSlova
silicon nanocrystals; ultrafast spectroscopy; photoluminescence spectroscopy
n3:klicoveSlovo
n8:silicon%20nanocrystals n8:photoluminescence%20spectroscopy n8:ultrafast%20spectroscopy
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[C7C71800A043]
n3:nazevZdroje
Optics Express
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
9
n3:projekt
n10:LC510 n10:IAA101120804 n10:KAN400100701
n3:rokUplatneniVysledku
n16:2010
n3:svazekPeriodika
18
n3:tvurceVysledku
Horrocks, B. R. Little, R. Ondič, Lukáš Žídek, K. Malý, P. Trojánek, F. Pelant, Ivan Šiller, L. Dohnalová, Kateřina
n3:wos
000285586800097
n3:zamer
n9:MSM0021620834 n9:AV0Z10100521
s:issn
1094-4087
s:numberOfPages
9