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Namespace Prefixes

PrefixIRI
n7http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n18http://purl.org/net/nknouf/ns/bibtex#
n12http://linked.opendata.cz/resource/domain/vavai/projekt/
n9http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n21http://linked.opendata.cz/ontology/domain/vavai/
n14https://schema.org/
n11http://linked.opendata.cz/resource/domain/vavai/zamer/
n16http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F10%3A00355161%21RIV11-MSM-68378271/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n4http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F10%3A00355161%21RIV11-MSM-68378271
rdf:type
skos:Concept n21:Vysledek
dcterms:description
We employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2. We employ UV photolithographic and electron beam lithographic patterning of diamond seeding layer on SiO2/Si substrates for the selective growth of micrometer and sub-micrometer diamond patterns. Using bottom-up strategy, thin diamond channels (470 nm in width) are directly grown. Differences between wet chemical and plasma treatment on the patterned diamond growth are studied. We find that the density of parasitic diamond crystals (outside predefined patterns) is lowered for gas mixture CF4/O2 plasma than for rich O2 plasma. After CF4/O2 plasma treatment, the density of parasitic crystals is 106 cm-2 which is comparable to the wet chemical treatment. Introducing sandwich-like structure, i.e. photoresist-seeding layer-photoresist, and its treatment (lift-off and CF4/O2 plasma) further reduces the density of parasitic crystals down to 105 cm-2.
dcterms:title
Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth
skos:prefLabel
Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth Comparison between chemical and plasmatic treatment of seeding layer for patterned diamond growth
skos:notation
RIV/68378271:_____/10:00355161!RIV11-MSM-68378271
n3:aktivita
n13:Z n13:P
n3:aktivity
P(IAAX00100902), P(KAN400100701), P(KAN400480701), P(LC510), Z(AV0Z10100521)
n3:dodaniDat
n4:2011
n3:domaciTvurceVysledku
n9:7465416 n9:7166494 Babchenko, Oleg n9:9994602 n9:5635853
n3:druhVysledku
n19:D
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
251362
n3:idVysledku
RIV/68378271:_____/10:00355161
n3:jazykVysledku
n20:eng
n3:klicovaSlova
diamond; plasma-enhanced CVD (PECVD) (deposition); microstructure
n3:klicoveSlovo
n5:plasma-enhanced%20CVD%20%28PECVD%29%20%28deposition%29 n5:diamond n5:microstructure
n3:kontrolniKodProRIV
[12B6B7960C6E]
n3:mistoKonaniAkce
Boston
n3:mistoVydani
Warrendale, PA
n3:nazevZdroje
Diamond Electronics and Bioelectronics - Fundamentals to Applications III
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
6
n3:projekt
n12:IAAX00100902 n12:KAN400480701 n12:KAN400100701 n12:LC510
n3:rokUplatneniVysledku
n4:2010
n3:tvurceVysledku
Remeš, Zdeněk Kromka, Alexander Rezek, Bohuslav Purkrt, A. Hruška, Karel Babchenko, Oleg
n3:typAkce
n7:WRD
n3:zahajeniAkce
2009-11-30+01:00
n3:zamer
n11:AV0Z10100521
s:numberOfPages
7
n18:hasPublisher
Materials Research Society
n14:isbn
978-1-60511-176-6