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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F10%3A00347762%21RIV11-MSM-68378271
rdf:type
skos:Concept n14:Vysledek
dcterms:description
We show that local currents observed by the Conductive Atomic Force Microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of Local Anodic Oxidation (LAO), as evidenced by observed topographic changes of Si surface. The tip-induced LAO changes the character of the local current maps in repeated scans or even in the first scan of a pristine surface. In particular, the oxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings. Finally, we have used brief HF acid etch to strip the oxide in order to restore the contrast in the C-AFM maps of aged samples and we compare the observed local current levels to those observed in ultra-high vacuum C-AFM on in-situ deposited samples. We show that local currents observed by the Conductive Atomic Force Microscopy (C-AFM) of silicon thin films measured in ambient atmosphere are generally limited by surface oxide, either native or created by the measurement itself in a process of Local Anodic Oxidation (LAO), as evidenced by observed topographic changes of Si surface. The tip-induced LAO changes the character of the local current maps in repeated scans or even in the first scan of a pristine surface. In particular, the oxidation of the neighboring scan lines leads to the appearance of grain edges as conductive rings. Finally, we have used brief HF acid etch to strip the oxide in order to restore the contrast in the C-AFM maps of aged samples and we compare the observed local current levels to those observed in ultra-high vacuum C-AFM on in-situ deposited samples.
dcterms:title
Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films
skos:prefLabel
Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films Role of the tip induced local anodic oxidation in the conductive atomic force microscopy of mixed phase silicon thin films
skos:notation
RIV/68378271:_____/10:00347762!RIV11-MSM-68378271
n3:aktivita
n9:P n9:Z
n3:aktivity
P(IAA100100902), P(KAN400100701), P(LC06040), P(LC510), Z(AV0Z10100521)
n3:cisloPeriodika
3-4
n3:dodaniDat
n12:2011
n3:domaciTvurceVysledku
n7:5056837 n7:9994602 n7:3750299 n7:2171449 n7:6810756 n7:7483155
n3:druhVysledku
n6:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
285769
n3:idVysledku
RIV/68378271:_____/10:00347762
n3:jazykVysledku
n17:eng
n3:klicovaSlova
local anodic oxidation (LAO); conductive atomic force microscopy (C-AFM)
n3:klicoveSlovo
n11:conductive%20atomic%20force%20microscopy%20%28C-AFM%29 n11:local%20anodic%20oxidation%20%28LAO%29
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[3D3530D99425]
n3:nazevZdroje
Physica Status Solidi C: Current Topics in Solid State Physics
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
6
n3:projekt
n10:IAA100100902 n10:LC510 n10:KAN400100701 n10:LC06040
n3:rokUplatneniVysledku
n12:2010
n3:svazekPeriodika
7
n3:tvurceVysledku
Rezek, Bohuslav Stuchlík, Jiří Kočka, Jan Ledinský, Martin Fejfar, Antonín Vetushka, Aliaksi
n3:zamer
n16:AV0Z10100521
s:issn
1862-6351
s:numberOfPages
4