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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00338190%21RIV10-AV0-68378271
rdf:type
n16:Vysledek skos:Concept
dcterms:description
LuAG Ce- or POr-doped scintillator became the subject of study while point defects make shallow trapping states. We found out this effect could be diminished by partial substitution of Al by Ga. Low temperature shift of thermoluminescence and enhancement of light yield by Ga substitution was observed. LuAG Ce- or POr-doped scintillator became the subject of study while point defects make shallow trapping states. We found out this effect could be diminished by partial substitution of Al by Ga. Low temperature shift of thermoluminescence and enhancement of light yield by Ga substitution was observed.
dcterms:title
Improvement of scintillation properties in Lu3Al5O12-based single crystal scintillators by Ga admixture Improvement of scintillation properties in Lu3Al5O12-based single crystal scintillators by Ga admixture
skos:prefLabel
Improvement of scintillation properties in Lu3Al5O12-based single crystal scintillators by Ga admixture Improvement of scintillation properties in Lu3Al5O12-based single crystal scintillators by Ga admixture
skos:notation
RIV/68378271:_____/09:00338190!RIV10-AV0-68378271
n4:aktivita
n11:Z
n4:aktivity
Z(AV0Z10100521)
n4:dodaniDat
n12:2010
n4:domaciTvurceVysledku
n7:3941450 n7:1021508
n4:druhVysledku
n5:O
n4:duvernostUdaju
n10:S
n4:entitaPredkladatele
n13:predkladatel
n4:idSjednocenehoVysledku
318840
n4:idVysledku
RIV/68378271:_____/09:00338190
n4:jazykVysledku
n6:eng
n4:klicovaSlova
LuAG scintillator; substitution of Al by Ga; thermoluminescence; light yield
n4:klicoveSlovo
n8:substitution%20of%20Al%20by%20Ga n8:thermoluminescence n8:LuAG%20scintillator n8:light%20yield
n4:kontrolniKodProRIV
[B109378490AA]
n4:obor
n14:BM
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
7
n4:rokUplatneniVysledku
n12:2009
n4:tvurceVysledku
Mihóková, Eva Vedda, A. Yoshikawa, A. Nikl, Martin Ogino, H. Shimoyama, J.-i. Kishio, K.
n4:zamer
n9:AV0Z10100521