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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00335956%21RIV10-MSM-68378271
rdf:type
skos:Concept n12:Vysledek
dcterms:description
Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg, which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described. Single shot radiation damage of bulk silicon induced by ultrashort XUV pulses was studied. The sample was chosen because it is broadly used in XUV optics and detectors where radiation damage is a key issue. It was irradiated at FLASH facility in Hamburg, which provides intense femtosecond pulses at 32.5 nm wavelength. The permanent structural modifications of the surfaces exposed to single shots were characterized by means of phase contrast optical microscopy and atomic force microscopy. Mechanisms of different, intensity dependent stages of the surface damage are described.
dcterms:title
Interaction of intense ultrashort XUV pulses with silicon Interaction of intense ultrashort XUV pulses with silicon
skos:prefLabel
Interaction of intense ultrashort XUV pulses with silicon Interaction of intense ultrashort XUV pulses with silicon
skos:notation
RIV/68378271:_____/09:00335956!RIV10-MSM-68378271
n3:aktivita
n15:Z n15:P
n3:aktivity
P(IAA400100701), P(KAN300100702), P(LA08024), P(LC510), P(LC528), Z(AV0Z10100523)
n3:dodaniDat
n11:2010
n3:domaciTvurceVysledku
n5:6173047 n5:3274713 n5:2712679 n5:3493725 n5:8434050
n3:druhVysledku
n7:D
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
319906
n3:idVysledku
RIV/68378271:_____/09:00335956
n3:jazykVysledku
n4:eng
n3:klicovaSlova
radiation damage; amorphization; ablation; monocrystalline silicon; soft x-ray free-electron laser
n3:klicoveSlovo
n8:soft%20x-ray%20free-electron%20laser n8:monocrystalline%20silicon n8:amorphization n8:ablation n8:radiation%20damage
n3:kontrolniKodProRIV
[736E8D823F54]
n3:mistoKonaniAkce
Prague
n3:mistoVydani
Bellingham
n3:nazevZdroje
Damage to VUV, EUV, and X-ray Optics II
n3:obor
n17:BH
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
16
n3:projekt
n13:LA08024 n13:KAN300100702 n13:LC528 n13:LC510 n13:IAA400100701
n3:rokUplatneniVysledku
n11:2009
n3:tvurceVysledku
Juha, Libor London, R. Pelka, J. B. Cihelka, Jaroslav Jurek, M. Klinger, D. Krzywinski, J. Jastrow, U. Hau-Riege, S. Wabnitz, H. Sobierajski, R. Stojanovic, N. Hájková, Věra Chalupský, Jaromír Toleikis, S. Vyšín, Luděk
n3:typAkce
n6:WRD
n3:zahajeniAkce
2009-04-21+02:00
n3:zamer
n21:AV0Z10100523
s:numberOfPages
11
n16:hasPublisher
SPIE
n20:isbn
9780819476357