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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00331693%21RIV10-MSM-68378271
rdf:type
n13:Vysledek skos:Concept
dcterms:description
In this paper we study the influence of progressing oxidation on the photoluminescence spectra of small silicon nanocrystals (SiNCs). H-terminated SiNCs exhibit only a fast approximately nanosecond photoluminescence component at about 525 nm, quenched and redshifted to about 550 nm by progressing oxidation. At the same time a new approximately microsecond photoluminescence component appears, intensity of which progressively increases and its peak position redshifts continuously from 575 up to 660 nm. We interpret our observations in terms of the quasidirect core electron-hole pair recombination quenched by the ultrafast trapping into the oxygen-related surface/interface states, forming within the band gap due to oxidation. In this paper we study the influence of progressing oxidation on the photoluminescence spectra of small silicon nanocrystals (SiNCs). H-terminated SiNCs exhibit only a fast approximately nanosecond photoluminescence component at about 525 nm, quenched and redshifted to about 550 nm by progressing oxidation. At the same time a new approximately microsecond photoluminescence component appears, intensity of which progressively increases and its peak position redshifts continuously from 575 up to 660 nm. We interpret our observations in terms of the quasidirect core electron-hole pair recombination quenched by the ultrafast trapping into the oxygen-related surface/interface states, forming within the band gap due to oxidation.
dcterms:title
Time-resolved photoluminescence spectroscopy of the initial oxidation Time-resolved photoluminescence spectroscopy of the initial oxidation
skos:prefLabel
Time-resolved photoluminescence spectroscopy of the initial oxidation Time-resolved photoluminescence spectroscopy of the initial oxidation
skos:notation
RIV/68378271:_____/09:00331693!RIV10-MSM-68378271
n3:aktivita
n15:P n15:Z
n3:aktivity
P(GA202/07/0818), P(IAA101120804), P(KJB100100903), P(LC510), Z(AV0Z10100521)
n3:cisloPeriodika
21
n3:dodaniDat
n12:2010
n3:domaciTvurceVysledku
n8:5943582 n8:4732650 n8:9441034
n3:druhVysledku
n16:J
n3:duvernostUdaju
n18:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
346373
n3:idVysledku
RIV/68378271:_____/09:00331693
n3:jazykVysledku
n9:eng
n3:klicovaSlova
silicon nanocrystals; photoluminescence; oxidation
n3:klicoveSlovo
n4:silicon%20nanocrystals n4:photoluminescence n4:oxidation
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[E6FEF262DFFB]
n3:nazevZdroje
Applied Physics Letters
n3:obor
n14:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n10:LC510 n10:IAA101120804 n10:KJB100100903 n10:GA202%2F07%2F0818
n3:rokUplatneniVysledku
n12:2009
n3:svazekPeriodika
94
n3:tvurceVysledku
Kůsová, Kateřina Pelant, Ivan Dohnalová, Kateřina
n3:wos
000266500400014
n3:zamer
n17:AV0Z10100521
s:issn
0003-6951
s:numberOfPages
3