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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00331687%21RIV10-MSM-68378271
rdf:type
skos:Concept n17:Vysledek
dcterms:description
We report on the spectral and dynamical properties of photoluminescence (PL) under ultrashort laser pulse excitation in Si nanocrystals prepared by Si+-ion implantation into a silica matrix. We concentrate on the luminescence properties that make it possible to distinguish several luminescence bands within a broad luminescence spectrum. In time-integrated luminescence, saturation-related changes suggest a presence of two different recombination channels connected to the nanocrystal volume states and the nanocrystal–SiO2 interface. The saturation of the luminescence can be explained in terms of Auger recombination. We investigated in detail fast sub-nanosecond luminescence, where significant differences were observed under UV excitation and for the excitation wavelengths in the visible part of the spectrum. We propose a rate-equations model based on the Auger and radiative/nonradiative recombination to interpret the experimental data. We report on the spectral and dynamical properties of photoluminescence (PL) under ultrashort laser pulse excitation in Si nanocrystals prepared by Si+-ion implantation into a silica matrix. We concentrate on the luminescence properties that make it possible to distinguish several luminescence bands within a broad luminescence spectrum. In time-integrated luminescence, saturation-related changes suggest a presence of two different recombination channels connected to the nanocrystal volume states and the nanocrystal–SiO2 interface. The saturation of the luminescence can be explained in terms of Auger recombination. We investigated in detail fast sub-nanosecond luminescence, where significant differences were observed under UV excitation and for the excitation wavelengths in the visible part of the spectrum. We propose a rate-equations model based on the Auger and radiative/nonradiative recombination to interpret the experimental data.
dcterms:title
Spectral and dynamical study of nonlinear luminescence from silicon nanocrystals excited by ultrashort pulses Spectral and dynamical study of nonlinear luminescence from silicon nanocrystals excited by ultrashort pulses
skos:prefLabel
Spectral and dynamical study of nonlinear luminescence from silicon nanocrystals excited by ultrashort pulses Spectral and dynamical study of nonlinear luminescence from silicon nanocrystals excited by ultrashort pulses
skos:notation
RIV/68378271:_____/09:00331687!RIV10-MSM-68378271
n3:aktivita
n8:Z n8:P
n3:aktivity
P(GA202/07/0818), P(IAA101120804), P(LC510), Z(AV0Z10100521)
n3:cisloPeriodika
6
n3:dodaniDat
n9:2010
n3:domaciTvurceVysledku
n16:9441034
n3:druhVysledku
n13:J
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
342872
n3:idVysledku
RIV/68378271:_____/09:00331687
n3:jazykVysledku
n15:eng
n3:klicovaSlova
implanted silicon; Auger recombination; nonlinear luminescence
n3:klicoveSlovo
n6:Auger%20recombination n6:nonlinear%20luminescence n6:implanted%20silicon
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[42BA2B31AD72]
n3:nazevZdroje
Physica E: Low-Dimensional Systems and Nanostructures
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
5
n3:projekt
n10:GA202%2F07%2F0818 n10:IAA101120804 n10:LC510
n3:rokUplatneniVysledku
n9:2009
n3:svazekPeriodika
41
n3:tvurceVysledku
Pelant, Ivan Malý, P. Dzurňák, B. Žídek, K. Trojánek, F.
n3:wos
000266675100017
n3:zamer
n14:AV0Z10100521
s:issn
1386-9477
s:numberOfPages
4