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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00331417%21RIV10-AV0-68378271
rdf:type
skos:Concept n16:Vysledek
dcterms:description
Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution were obtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at low coverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface. Growth of atomic indium chains - 1D islands - on the Si(100)-2x1 surface was observed by scanning tunneling microscopy at room temperature and simulated by means of a kinetic Monte Carlo method. Density of indium islands and island size distribution were obtained for various deposition rates and coverage. Important role of C-type defects at adsorption of metal atoms was observed. Measured growth characteristics were simulated using a microscopic model with anisotropic surface diffusion and forbidden zones along the metal chains. An analysis of experimental and simulation data shows that detachment of indium adatoms from the chains substantially influences a growth scenario and results in monotonously decreasing chain length distribution function at low coverage. Diffusion barriers determined from the simulations correspond to almost isotropic diffusion of indium adatoms on the surface.
dcterms:title
Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1 Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1
skos:prefLabel
Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1 Heterogeneous nucleation and adatom detachment at one-dimensional growth of In on Si(100)-2 x 1
skos:notation
RIV/68378271:_____/09:00331417!RIV10-AV0-68378271
n3:aktivita
n6:S n6:P n6:Z
n3:aktivity
P(GA202/06/0049), S, Z(AV0Z10100520), Z(MSM0021620834)
n3:cisloPeriodika
16
n3:dodaniDat
n5:2010
n3:domaciTvurceVysledku
n14:8716935
n3:druhVysledku
n10:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
317047
n3:idVysledku
RIV/68378271:_____/09:00331417
n3:jazykVysledku
n17:eng
n3:klicovaSlova
atomic chains; surface growth; nanostructures; indium; silicon; adatom diffusion; STM; kinetic MC; simulation
n3:klicoveSlovo
n8:simulation n8:silicon n8:STM n8:nanostructures n8:kinetic%20MC n8:surface%20growth n8:atomic%20chains n8:adatom%20diffusion n8:indium
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[F9B5CBDB71E0]
n3:nazevZdroje
Physical Review. B
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
5
n3:projekt
n18:GA202%2F06%2F0049
n3:rokUplatneniVysledku
n5:2009
n3:svazekPeriodika
79
n3:tvurceVysledku
Setvín, M. Javorský, J. Sobotík, P. Ošt'ádal, I. Kotrla, Miroslav
n3:wos
000265945200102
n3:zamer
n11:MSM0021620834 n11:AV0Z10100520
s:issn
1098-0121
s:numberOfPages
9