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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00331262%21RIV10-MSM-68378271
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Starting with the demonstration of efficient photoluminescence of silicon nanocrystals, nanocrystalline silicon is ranked among the most studied semiconductor materials. Its main prospect is assigned to the possibility of constructing a silicon based laser, which could be easily integrated into present microelectronic chips. To attain higher optical gain it is necessary to investigate and identify processes in Si NCs. We investigated the processes extending time scales from hundreds of femtosecond to miliseconds, namely by up-conversion technique, by a streak camera and a PMT. We studied the processes in various Si NC systems, including also organically passivated NCs which allowed us to distinguish between intrinsic Si NC properties and effects of Si SiO2 interface. Time-resolved spectroscopy were extended by optical gain measurements and measurements of nonlinear properties by using two-photon absorption. Starting with the demonstration of efficient photoluminescence of silicon nanocrystals, nanocrystalline silicon is ranked among the most studied semiconductor materials. Its main prospect is assigned to the possibility of constructing a silicon based laser, which could be easily integrated into present microelectronic chips. To attain higher optical gain it is necessary to investigate and identify processes in Si NCs. We investigated the processes extending time scales from hundreds of femtosecond to miliseconds, namely by up-conversion technique, by a streak camera and a PMT. We studied the processes in various Si NC systems, including also organically passivated NCs which allowed us to distinguish between intrinsic Si NC properties and effects of Si SiO2 interface. Time-resolved spectroscopy were extended by optical gain measurements and measurements of nonlinear properties by using two-photon absorption.
dcterms:title
Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy
skos:prefLabel
Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy Nonlinear optical properties of silicon nanocrystals studied by ultrafast spectroscopy
skos:notation
RIV/68378271:_____/09:00331262!RIV10-MSM-68378271
n3:aktivita
n8:P n8:Z
n3:aktivity
P(GA202/07/0818), P(IAA101120804), P(LC510), Z(AV0Z10100521)
n3:dodaniDat
n14:2010
n3:domaciTvurceVysledku
n7:9441034 n7:4732650 n7:3718441 n7:5943582 n7:6190790
n3:druhVysledku
n9:O
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
329718
n3:idVysledku
RIV/68378271:_____/09:00331262
n3:jazykVysledku
n5:eng
n3:klicovaSlova
silicon; nanocrystal; spectroscopy; recombination
n3:klicoveSlovo
n10:recombination n10:spectroscopy n10:nanocrystal n10:silicon
n3:kontrolniKodProRIV
[3E08F4685CF3]
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
12
n3:projekt
n12:IAA101120804 n12:GA202%2F07%2F0818 n12:LC510
n3:rokUplatneniVysledku
n14:2009
n3:tvurceVysledku
Gilliot, P. Pelant, Ivan Jonusauskas, G. Dohnalová, Kateřina Malý, P. Cibulka, Ondřej Trojánek, F. Žídek, Karel Kůsová, Kateřina Crégut, O. Oberlé, J. Hönerlage, B.
n3:zamer
n15:AV0Z10100521