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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00328762%21RIV10-AV0-68378271
rdf:type
n17:Vysledek skos:Concept
dcterms:description
High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y3Al5O12) and Yttrium Aluminum Perovskite (YAlO3) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 8C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 8C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116–773 nm. Thickness of layers was up to 17 mm. High quality, thick, highly oriented crystalline thin films of Yttrium Aluminum Garnet (Y3Al5O12) and Yttrium Aluminum Perovskite (YAlO3) doped with Erbium were prepared by pulsed laser deposition. Samples were created in vacuum or oxygen environment. Depositions were arranged at room temperature, or at high substrate temperatures ranging from 800 to 1100 8C. Amorphous layers were annealed by laser, or in oven (argon flow, temperatures in range from 1200 to 1400 8C). Fused silica and sapphire (0 0 0 1) were used as substrates. Properties of films were characterized by X-ray diffraction, atomic force microscopy, and by photoluminescence measurement. Size of crystalline grains was in the range 116–773 nm. Thickness of layers was up to 17 mm.
dcterms:title
Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing
skos:prefLabel
Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing Highly oriented crystalline Er:YAG and Er:YAP layers prepared by PLD and annealing
skos:notation
RIV/68378271:_____/09:00328762!RIV10-AV0-68378271
n4:aktivita
n12:S n12:P n12:Z
n4:aktivity
P(GA202/06/0216), S, Z(AV0Z10100522)
n4:cisloPeriodika
10
n4:dodaniDat
n10:2010
n4:domaciTvurceVysledku
n7:1722247 n7:7895712 n7:5799015 n7:8183201 n7:4824040 n7:5035139
n4:druhVysledku
n14:J
n4:duvernostUdaju
n15:S
n4:entitaPredkladatele
n8:predkladatel
n4:idSjednocenehoVysledku
317157
n4:idVysledku
RIV/68378271:_____/09:00328762
n4:jazykVysledku
n9:eng
n4:klicovaSlova
Er:YAG; thin films; waveguides; PLD; laser
n4:klicoveSlovo
n6:laser n6:Er%3AYAG n6:thin%20films n6:waveguides n6:PLD
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[ED356F4369B6]
n4:nazevZdroje
Applied Surface Science
n4:obor
n18:BM
n4:pocetDomacichTvurcuVysledku
6
n4:pocetTvurcuVysledku
8
n4:projekt
n5:GA202%2F06%2F0216
n4:rokUplatneniVysledku
n10:2009
n4:svazekPeriodika
255
n4:tvurceVysledku
Remsa, Jan Kocourek, Tomáš Oswald, Jiří Studnička, Václav Jelínek, M. Uherek, F. Čerňanský, Marian Jelínek, Miroslav
n4:wos
000263865000042
n4:zamer
n16:AV0Z10100522
s:issn
0169-4332
s:numberOfPages
3