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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F09%3A00328675%21RIV10-AV0-68378271
rdf:type
n3:Vysledek skos:Concept
dcterms:description
Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition. Deep level transient spectroscopy (DLTS) measurements were carried out on GaN/AlGaN/SiC heterostructures prepared by MOVPE. The deep level parameters were correlated with the SiC substrate orientation and the AlGaN layer composition.
dcterms:title
Deep defects in GaN/AlGaN/SiC hererostructures Deep defects in GaN/AlGaN/SiC hererostructures
skos:prefLabel
Deep defects in GaN/AlGaN/SiC hererostructures Deep defects in GaN/AlGaN/SiC hererostructures
skos:notation
RIV/68378271:_____/09:00328675!RIV10-AV0-68378271
n4:aktivita
n15:P n15:Z
n4:aktivity
P(GA202/07/0525), Z(AV0Z10100521)
n4:cisloPeriodika
9
n4:dodaniDat
n13:2010
n4:domaciTvurceVysledku
n5:3075001 n5:7422148 n5:8935688 n5:7946279 n5:9935754
n4:druhVysledku
n14:J
n4:duvernostUdaju
n17:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
309235
n4:idVysledku
RIV/68378271:_____/09:00328675
n4:jazykVysledku
n8:eng
n4:klicovaSlova
nitrides; silicon carbide; deep levels; DLTS
n4:klicoveSlovo
n7:silicon%20carbide n7:DLTS n7:nitrides n7:deep%20levels
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[9149ABFF4890]
n4:nazevZdroje
Journal of Applied Physics
n4:obor
n18:BM
n4:pocetDomacichTvurcuVysledku
5
n4:pocetTvurcuVysledku
7
n4:projekt
n11:GA202%2F07%2F0525
n4:rokUplatneniVysledku
n13:2009
n4:svazekPeriodika
105
n4:tvurceVysledku
Výborný, Zdeněk Leys, M. R. Krištofik, Jozef Boeykens, S. Hubík, Pavel Kindl, Dobroslav Mareš, Jiří J.
n4:wos
000266263300075
n4:zamer
n16:AV0Z10100521
s:issn
0021-8979
s:numberOfPages
8