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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F08%3A00320729%21RIV09-AV0-68378271
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Vrstvy diamantu dopovaného borem v širokém oboru koncenterací byly vypěstovány na (100) monokrystalických substrátech. Charakterizovány byly pomocí optických a elektrických metod. Získány vrstvy s Hallovou pohyblivostí blízkou pohyblivosti děr v přírodním diamantu. Morfologie vrstev byla sledována pomocí skenovací elektronové mikroskopie, jejich čistota zkoumána pomocí katodoluminiscence. Fotovodivostní spektroskopie (FTPS) odhalila vliv koncentrace boru na počátek fotoionizace a na excitované stavy. Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases. Boron doped diamond layers have been grown on (100) single crystal substrates in a wide range of boron concentration. The layers have been electrically and optically characterized. Boron doped layers with Hall mobility closes to natural diamond holes mobility have been obtained. The films morphology has been observed by scanning electron microscopy and their purity has been assessed by cathodoluminescence. Fourier Transform Photocurrent spectroscopy results show the evolution of the photo-ionization onset and the excited states as boron concentration in the films increases.
dcterms:title
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Charakterizace epitaxních vrstev diamantu dotovaného borem vypěstovaných v reaktoru typu NIRIM
skos:prefLabel
Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Characterization of boron doped diamond epilayers grown in a NIRIM type reactor Charakterizace epitaxních vrstev diamantu dotovaného borem vypěstovaných v reaktoru typu NIRIM
skos:notation
RIV/68378271:_____/08:00320729!RIV09-AV0-68378271
n3:aktivita
n10:Z
n3:aktivity
Z(AV0Z10100520)
n3:cisloPeriodika
7
n3:dodaniDat
n7:2009
n3:domaciTvurceVysledku
n9:5662281
n3:druhVysledku
n14:J
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
359575
n3:idVysledku
RIV/68378271:_____/08:00320729
n3:jazykVysledku
n6:eng
n3:klicovaSlova
CVD diamond; homoepitaxy; P-type doping; electrical properties; optical properties
n3:klicoveSlovo
n5:electrical%20properties n5:CVD%20diamond n5:P-type%20doping n5:optical%20properties n5:homoepitaxy
n3:kodStatuVydavatele
CH - Švýcarská konfederace
n3:kontrolniKodProRIV
[C5573F8C732E]
n3:nazevZdroje
Diamond and Related Materials
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n7:2008
n3:svazekPeriodika
17
n3:tvurceVysledku
D´Olieslaeger, M. Haenen, K. Teraji, T. Lazea, A. Vorlíček, Vladimír D´Haen, J. Daenen, M. Mortet, V.
n3:wos
000259598300059
n3:zamer
n17:AV0Z10100520
s:issn
0925-9635
s:numberOfPages
5