This HTML5 document contains 59 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n9http://linked.opendata.cz/resource/domain/vavai/projekt/
n5http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/ontology/domain/vavai/
n15http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
n12http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68378271%3A_____%2F08%3A00308047%21RIV08-AV0-68378271/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n8http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n6http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F08%3A00308047%21RIV08-AV0-68378271
rdf:type
skos:Concept n17:Vysledek
dcterms:description
Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown. Struktury s jednou a dvěma vrstvami InAs/GaAs kvantových teček a vrstvami redukujícími pnutí byly připraveny pomocí MOVPE. Růst těchto struktur, vykazujících velmi intenzivní fotoluminiscenci za pokojové teploty emitované na vlnových délkách od 1.25 do 1.55 μm byl monitorován pomocí RAS. Single- and double-layer InAs/GaAs quantum dot structures with strain-reducing layers (SRLs) were prepared by metalorganic vaporphase epitaxy using the Stranski–Krastanow growth mode. Structures were studied in-situ by reflectance anisotropy spectroscopy (RAS), and ex-situ by photoluminescence (PL). These structures, with very intense room temperature PL at wavelengths from 1.25 to 1.55 μm according to growth and structure parameters, were grown along while monitored with RAS. Strong correlation between RAS signal and PL intensity was found. Dependence of PL emission maximum position on SRL composition and capping layer thickness is shown.
dcterms:title
Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures
skos:prefLabel
Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami
skos:notation
RIV/68378271:_____/08:00308047!RIV08-AV0-68378271
n4:strany
2229;2233
n4:aktivita
n10:P n10:Z
n4:aktivity
P(GA202/05/0242), P(GA202/06/0718), P(IAA100100719), P(KJB101630601), Z(AV0Z10100521)
n4:cisloPeriodika
7-9
n4:dodaniDat
n6:2008
n4:domaciTvurceVysledku
n5:6156142 n5:7698542 n5:4653416 n5:7895585 n5:6777430 n5:3860701 n5:4824040 n5:7369123
n4:druhVysledku
n8:J
n4:duvernostUdaju
n14:S
n4:entitaPredkladatele
n12:predkladatel
n4:idSjednocenehoVysledku
369673
n4:idVysledku
RIV/68378271:_____/08:00308047
n4:jazykVysledku
n18:eng
n4:klicovaSlova
nanostructures; metalorganic vapor-phase epitaxy; semiconducting III–V materials
n4:klicoveSlovo
n16:metalorganic%20vapor-phase%20epitaxy n16:semiconducting%20III%E2%80%93V%20materials n16:nanostructures
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[7E9AD80BCE6C]
n4:nazevZdroje
Journal of Crystal Growth
n4:obor
n11:BM
n4:pocetDomacichTvurcuVysledku
8
n4:pocetTvurcuVysledku
8
n4:projekt
n9:GA202%2F06%2F0718 n9:KJB101630601 n9:GA202%2F05%2F0242 n9:IAA100100719
n4:rokUplatneniVysledku
n6:2008
n4:svazekPeriodika
310
n4:tvurceVysledku
Kuldová, Karla Šimeček, Tomislav Melichar, Karel Hulicius, Eduard Oswald, Jiří Pangrác, Jiří Hospodková, Alice Vyskočil, Jan
n4:zamer
n15:AV0Z10100521
s:issn
0022-0248
s:numberOfPages
5