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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F05%3A00021144%21RIV06-AV0-68378271
rdf:type
n12:Vysledek skos:Concept
dcterms:description
Morfologie povrchu, tzv. pomerančová kůra, se studovala ve strukturách InGaAs/GaAs metodami s vysokým rozlišením. Bylo zjištěno, že jev nezpůsobuje bodové poruchy, které by mohly vysvětlit absenci kapacitních transientních jevů pocházejících z kvantové jámy. Surface morfology, known as a orange-peel pattern, was studied by different high-resolution methods in InGaAs/GaAs structures. It was found that the effect does not cause point defects that could explain lacking capacitance transients due to the quantum well. Surface morfology, known as a orange-peel pattern, was studied by different high-resolution methods in InGaAs/GaAs structures. It was found that the effect does not cause point defects that could explain lacking capacitance transients due to the quantum well.
dcterms:title
Jev pomerančové kůry ve strukturách In0.2Ga0.8As/GaAs s kvantovou jámou Orange-peel effect in In0.2Ga0.8As/GaAs quantum well structure Orange-peel effect in In0.2Ga0.8As/GaAs quantum well structure
skos:prefLabel
Jev pomerančové kůry ve strukturách In0.2Ga0.8As/GaAs s kvantovou jámou Orange-peel effect in In0.2Ga0.8As/GaAs quantum well structure Orange-peel effect in In0.2Ga0.8As/GaAs quantum well structure
skos:notation
RIV/68378271:_____/05:00021144!RIV06-AV0-68378271
n3:strany
127;130
n3:aktivita
n6:P n6:Z
n3:aktivity
P(GA202/03/0410), P(IAA1010318), P(IAA1010404), Z(AV0Z10100521)
n3:dodaniDat
n5:2006
n3:domaciTvurceVysledku
n4:7369123 n4:8935688 n4:4824040
n3:druhVysledku
n10:D
n3:duvernostUdaju
n21:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
534954
n3:idVysledku
RIV/68378271:_____/05:00021144
n3:jazykVysledku
n7:eng
n3:klicovaSlova
orange-peel; quantum well; InGaAs/GaAs; capacitance transients
n3:klicoveSlovo
n11:quantum%20well n11:InGaAs%2FGaAs n11:orange-peel n11:capacitance%20transients
n3:kontrolniKodProRIV
[20E97A2EF5DB]
n3:mistoKonaniAkce
Budapest
n3:mistoVydani
Budapest
n3:nazevZdroje
Proceedings of the First Intnl Workhop on Semiconductor Nanocrystals SEMINAMO 2005
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
7
n3:projekt
n20:IAA1010318 n20:IAA1010404 n20:GA202%2F03%2F0410
n3:rokUplatneniVysledku
n5:2005
n3:tvurceVysledku
Hulicius, Eduard Koós, A. A. Pongracz, A. Hubík, Pavel Oswald, Jiří Dózsa, L. Tóth, A. L.
n3:typAkce
n8:EUR
n3:zahajeniAkce
2005-09-10+02:00
n3:zamer
n13:AV0Z10100521
s:numberOfPages
4
n16:hasPublisher
Neuveden
n14:isbn
963-7371-19-2