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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F03%3A02030495%21RIV%2F2004%2FAV0%2FA02004%2FN
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Higher content of hydrogen at lower T s facilitatesformation od order silicon phase even close to room temperature (the sample grown at 35 o C had 30at% of hydrogen and crystallinity .appreq.60%), providing a technological window for deposition of silicon thin films on cheap polymer substrates with electronic properties suitable for cells. Higher content of hydrogen at lower T s facilitatesformation od order silicon phase even close to room temperature (the sample grown at 35 o C had 30at% of hydrogen and crystallinity .appreq.60%), providing a technological window for deposition of silicon thin films on cheap polymer substrates with electronic properties suitable for cells.
dcterms:title
Structure and properties of silicon thin films deposited at low substrate temperatures. Structure and properties of silicon thin films deposited at low substrate temperatures.
skos:prefLabel
Structure and properties of silicon thin films deposited at low substrate temperatures. Structure and properties of silicon thin films deposited at low substrate temperatures.
skos:notation
RIV/68378271:_____/03:02030495!RIV/2004/AV0/A02004/N
n3:strany
L987;L989
n3:aktivita
n13:Z n13:P
n3:aktivity
P(GA202/03/0789), P(IAA1010316), P(IAB2949101), Z(AV0Z1010914), Z(AV0Z1048901), Z(MSM 113200002)
n3:cisloPeriodika
8B
n3:dodaniDat
n12:2004
n3:domaciTvurceVysledku
n8:9441034 n8:8509697 n8:8470847 n8:7407653 n8:3750299 n8:6810756 n8:5056837 n8:2874717
n3:druhVysledku
n17:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
629245
n3:idVysledku
RIV/68378271:_____/03:02030495
n3:jazykVysledku
n5:eng
n3:klicovaSlova
a-Si:H; .mu.c-Si:H; low-temperature growth; plastic substrates; crystallinity; hydrogen; electron transport
n3:klicoveSlovo
n4:hydrogen n4:.mu.c-Si%3AH n4:a-Si%3AH n4:electron%20transport n4:plastic%20substrates n4:crystallinity n4:low-temperature%20growth
n3:kodStatuVydavatele
JP - Japonsko
n3:kontrolniKodProRIV
[DF23299C6D20]
n3:nazevZdroje
Japanese Journal of Applied Physics. Pt. 2
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
8
n3:pocetTvurcuVysledku
13
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n11:IAA1010316 n11:GA202%2F03%2F0789 n11:IAB2949101
n3:rokUplatneniVysledku
n12:2003
n3:svazekPeriodika
42
n3:tvurceVysledku
Stuchlíková, The-Ha Uyama, H. Kočka, Jan Mates, Tomáš Luterová, Kateřina Pelant, Ivan Ro, K. Fejfar, Antonín Macková, Anna Ito, M. Ledinský, Martin Fojtík, Petr Baumruk, V.
n3:zamer
n9:AV0Z1048901 n9:MSM%20113200002 n9:AV0Z1010914
s:issn
0021-4922
s:numberOfPages
3