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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F03%3A02030379%21RIV%2F2004%2FAV0%2FA02004%2FN
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Contribution presents the electroluminescence, photoabsorption and polarisation properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures (above 25 o C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperatures operation range. Contribution presents the electroluminescence, photoabsorption and polarisation properties of semiconductor lasers with thin strained InAs layers in GaAs at elevated temperatures (above 25 o C). The lasers exhibit high optical recombination efficiency, low threshold current density and wide temperatures operation range.
dcterms:title
Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures. Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures.
skos:prefLabel
Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures. Lasers with thin strained InAs layers in GaAs - electron-optical characterisation and operation at elevated temperatures.
skos:notation
RIV/68378271:_____/03:02030379!RIV/2004/AV0/A02004/N
n3:strany
12;18
n3:aktivita
n9:Z n9:P
n3:aktivity
P(IAA1010318), P(KSK1010104), Z(AV0Z1010914)
n3:dodaniDat
n5:2004
n3:domaciTvurceVysledku
n6:3781607 n6:7369123 n6:6777430 n6:6156142 n6:3860701 n6:7895585 n6:4824040
n3:druhVysledku
n16:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
613236
n3:idVysledku
RIV/68378271:_____/03:02030379
n3:jazykVysledku
n17:eng
n3:klicovaSlova
strained quantum well; InAs; GaAs; electroluminescence; photoabsorption; polarization
n3:klicoveSlovo
n8:strained%20quantum%20well n8:electroluminescence n8:GaAs n8:photoabsorption n8:InAs n8:polarization
n3:kontrolniKodProRIV
[4D0A6F2F52F6]
n3:mistoKonaniAkce
Lecce [IT]
n3:mistoVydani
Lecce
n3:nazevZdroje
European Workshop on Metalorganic Vapour Phase Epitaxy /10./.
n3:obor
n7:BM
n3:pocetDomacichTvurcuVysledku
7
n3:pocetTvurcuVysledku
8
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n20:KSK1010104 n20:IAA1010318
n3:rokUplatneniVysledku
n5:2003
n3:tvurceVysledku
Pangrác, Jiří Melichar, Karel Hulicius, Eduard Oswald, Jiří Hospodková, Alice Hazdra, P. Mačkal, Adam Šimeček, Tomislav
n3:typAkce
n10:WRD
n3:zahajeniAkce
2003-06-08+02:00
n3:zamer
n18:AV0Z1010914
s:numberOfPages
6
n15:hasPublisher
Ecotekne Congress Centre
n19:isbn
88-8305-007-X