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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F02%3A02020172%21RIV%2F2003%2FAV0%2FA02003%2FN
rdf:type
skos:Concept n9:Vysledek
dcterms:description
We discuss results of surface photovoltage (U) measurements for d=10.mu.m thick layers of undoped hydrogenated microcrystalline silicon. By applying excitation with low energetic photons a photovolatge peak appears on a curve U=u(.alfa.). We present a mathematical model that enable us to link this peak to photocharge separation in the bottom space charge region at the interface .mu.c-Si:H/substrat. We discuss results of surface photovoltage (U) measurements for d=10.mu.m thick layers of undoped hydrogenated microcrystalline silicon. By applying excitation with low energetic photons a photovolatge peak appears on a curve U=u(.alfa.). We present a mathematical model that enable us to link this peak to photocharge separation in the bottom space charge region at the interface .mu.c-Si:H/substrat.
dcterms:title
Surface photovoltage measurements in .mu.c-Si:H: manifestation of the bottom space charge region. Surface photovoltage measurements in .mu.c-Si:H: manifestation of the bottom space charge region.
skos:prefLabel
Surface photovoltage measurements in .mu.c-Si:H: manifestation of the bottom space charge region. Surface photovoltage measurements in .mu.c-Si:H: manifestation of the bottom space charge region.
skos:notation
RIV/68378271:_____/02:02020172!RIV/2003/AV0/A02003/N
n3:strany
2323;2329
n3:aktivita
n8:Z
n3:aktivity
Z(AV0Z1010914)
n3:cisloPeriodika
5
n3:dodaniDat
n17:2003
n3:domaciTvurceVysledku
n6:8795525 n6:9441034 n6:7407653 n6:3750299
n3:druhVysledku
n13:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
665933
n3:idVysledku
RIV/68378271:_____/02:02020172
n3:jazykVysledku
n16:eng
n3:klicovaSlova
.mu.c-Si:H; surface photovoltage measurements; mathematical model
n3:klicoveSlovo
n10:surface%20photovoltage%20measurements n10:mathematical%20model n10:.mu.c-Si%3AH
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[EAC0E4EBC772]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n14:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:rokUplatneniVysledku
n17:2002
n3:svazekPeriodika
92
n3:tvurceVysledku
Fejfar, Antonín Fojtík, Petr Švrček, Vladimír Pelant, Ivan
n3:zamer
n15:AV0Z1010914
s:issn
0021-8979
s:numberOfPages
7