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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F02%3A00021397%21RIV06-AV0-68378271
rdf:type
n9:Vysledek skos:Concept
dcterms:description
Charge transport was studied by means of I-V characteristics in different SI-GaAs-based structures. Supression of the reverse current and increase of the breakdown voltage in the system with the LT-MBE layer has been explained by a blocking of the minority carrier injection by this layer. Charge transport was studied by means of I-V characteristics in different SI-GaAs-based structures. Supression of the reverse current and increase of the breakdown voltage in the system with the LT-MBE layer has been explained by a blocking of the minority carrier injection by this layer. Měřením voltampérových charakteristik byl studován transport náboje v různých strukturách založených na SI-GaAs. Potlačení závěrného proudu a zvýšení průrazného napětí v systému s vrstvou LT-MBE bylo vysvětleno blokováním minoritních nositelů náboje touto cestou.
dcterms:title
Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface Experimentální důkazy extrakce minoritních nosičů náboje v SI-GaAs a v rozhraní LT MBE GaAs
skos:prefLabel
Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface Experimentální důkazy extrakce minoritních nosičů náboje v SI-GaAs a v rozhraní LT MBE GaAs Experimental evidence of the minority carrier extraction at the bulk semi-insulating GaAs/As-implanted and LT MBE GaAs interface
skos:notation
RIV/68378271:_____/02:00021397!RIV06-AV0-68378271
n3:strany
65;70
n3:aktivita
n8:Z
n3:aktivity
Z(AV0Z1010914)
n3:dodaniDat
n10:2006
n3:domaciTvurceVysledku
n13:8935688 n13:7946279
n3:druhVysledku
n16:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
645707
n3:idVysledku
RIV/68378271:_____/02:00021397
n3:jazykVysledku
n11:eng
n3:klicovaSlova
semi-insulating GaAs; LT-MBE GaAs; charge transport
n3:klicoveSlovo
n19:LT-MBE%20GaAs n19:semi-insulating%20GaAs n19:charge%20transport
n3:kontrolniKodProRIV
[62F265BB1256]
n3:mistoKonaniAkce
Asilomar Cafifornia
n3:mistoVydani
University of Erlangen
n3:nazevZdroje
Proc. of the 4th Symposium on Non-Stoichiometric III-V Compounds,
n3:obor
n14:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n10:2002
n3:tvurceVysledku
Frigeri, P. Dubecký, F. Förster, A. Hubík, Pavel Krištofik, Jozef Ferrari, C. Zat´ko, B. Kordoš, P.
n3:typAkce
n18:WRD
n3:zahajeniAkce
2002-09-02+02:00
n3:zamer
n12:AV0Z1010914
s:numberOfPages
6
n20:hasPublisher
Lehrstuhl für Mikrocharakterisierung
n17:isbn
3-932392-39-6