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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F01%3A02010489%21RIV%2F2003%2FAV0%2FA02003%2FN
rdf:type
skos:Concept n20:Vysledek
dcterms:description
The paper reviews critically the results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + - implanted SiO 2 films from the point of view of light emission applications. Wide band gap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region. The paper reviews critically the results of investigation of hydrogenated amorphous silicon (a-Si:H) and Si + - implanted SiO 2 films from the point of view of light emission applications. Wide band gap a-Si:H with the energy gap ranging from 2.0 to 2.2 eV exhibits room temperature photoluminescence in the visible region.
dcterms:title
Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H. Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H.
skos:prefLabel
Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H. Silicon-based-light-emitting materials: implanted SiO 2 films and wide bandgap a-Si:H.
skos:notation
RIV/68378271:_____/01:02010489!RIV/2003/AV0/A02003/N
n4:strany
66;76
n4:aktivita
n13:Z n13:P
n4:aktivity
P(GA202/98/0669), P(IAB1112901), Z(AV0Z1010914)
n4:dodaniDat
n7:2003
n4:domaciTvurceVysledku
n5:7407653 n5:9441034 n5:2874717 n5:7725604
n4:druhVysledku
n16:D
n4:duvernostUdaju
n11:S
n4:entitaPredkladatele
n19:predkladatel
n4:idSjednocenehoVysledku
695714
n4:idVysledku
RIV/68378271:_____/01:02010489
n4:jazykVysledku
n15:eng
n4:klicovaSlova
amorphous silicon; - implanted SiO 2; - silicon nanocrystals; photoluminescence; - electroluminescence
n4:klicoveSlovo
n6:-%20implanted%20SiO%202 n6:photoluminescence n6:-%20silicon%20nanocrystals n6:amorphous%20silicon n6:-%20electroluminescence
n4:kontrolniKodProRIV
[69BE61F5D8FD]
n4:mistoKonaniAkce
Vilnius [LT]
n4:mistoVydani
Washington
n4:nazevZdroje
Optical Organic and Inorganic Materials.
n4:obor
n14:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
10
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:projekt
n18:GA202%2F98%2F0669 n18:IAB1112901
n4:rokUplatneniVysledku
n7:2001
n4:tvurceVysledku
Tomasiunas, R. Pelant, Ivan Rehspringer, J. L. Valenta, Jan Fojtík, Petr Hönerlage, B. Dian, J. Luterová, Kateřina Grob, J. J. Müller, D.
n4:typAkce
n17:WRD
n4:zahajeniAkce
2000-08-16+02:00
n4:zamer
n10:AV0Z1010914
s:numberOfPages
11
n21:hasPublisher
SPIE
n12:isbn
0-8194-4120-1