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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F00%3A02000451%21RIV%2F2003%2FAV0%2FA02003%2FN
rdf:type
skos:Concept n17:Vysledek
dcterms:description
InAs/GaAs laser structures based on atomically thin InAs strained quantum wells were prepared by metal-organic vapour phase epitaxy. The dependence of electroluminescence spectra on the thickness, as well as on the number of InAs quantum wells, was studied. InAs/GaAs laser structures based on atomically thin InAs strained quantum wells were prepared by metal-organic vapour phase epitaxy. The dependence of electroluminescence spectra on the thickness, as well as on the number of InAs quantum wells, was studied.
dcterms:title
InAs/GaAs lasers with very thin active layer. InAs/GaAs lasers with very thin active layer.
skos:prefLabel
InAs/GaAs lasers with very thin active layer. InAs/GaAs lasers with very thin active layer.
skos:notation
RIV/68378271:_____/00:02000451!RIV/2003/AV0/A02003/N
n4:strany
233;236
n4:aktivita
n10:Z n10:P
n4:aktivity
P(GA102/99/0414), P(IAA1010807), Z(AV0Z1010914)
n4:cisloPeriodika
N/A
n4:dodaniDat
n12:2003
n4:domaciTvurceVysledku
n8:6777430 n8:7369123 n8:4824040 n8:6156142 n8:3860701 n8:3338878 Vančura, Milan
n4:druhVysledku
n18:J
n4:duvernostUdaju
n9:S
n4:entitaPredkladatele
n5:predkladatel
n4:idSjednocenehoVysledku
713347
n4:idVysledku
RIV/68378271:_____/00:02000451
n4:jazykVysledku
n14:eng
n4:klicovaSlova
N/A
n4:klicoveSlovo
n16:N%2FA
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[9D2A58E46D7E]
n4:nazevZdroje
Thin Solid Films
n4:obor
n13:BM
n4:pocetDomacichTvurcuVysledku
7
n4:pocetTvurcuVysledku
8
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:projekt
n7:IAA1010807 n7:GA102%2F99%2F0414
n4:rokUplatneniVysledku
n12:2000
n4:svazekPeriodika
380
n4:tvurceVysledku
Melichar, Karel Hradil, J. Pangrác, Jiří Oswald, Jiří Hulicius, Eduard Petříček, Otto Šimeček, Tomislav Vančura, Milan
n4:zamer
n15:AV0Z1010914
s:issn
0040-6090
s:numberOfPages
4