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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F00%3A02000429%21RIV%2F2003%2FAV0%2FA02003%2FN
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed. Delta(Si)-doped GaAs samples grown by metalorganic vapor phase epitaxy are studied by capacitance-voltage and deep level transient spectroscopy techniques. A ditailed analysis of the DLTS signal is performed.
dcterms:title
Deep levels in GaAs due to Si .delta. doping. Deep levels in GaAs due to Si .delta. doping.
skos:prefLabel
Deep levels in GaAs due to Si .delta. doping. Deep levels in GaAs due to Si .delta. doping.
skos:notation
RIV/68378271:_____/00:02000429!RIV/2003/AV0/A02003/N
n3:strany
6488;6494
n3:aktivita
n5:Z n5:P
n3:aktivity
P(GA202/99/0410), P(IAA1010806), P(IAA1010807), Z(AV0Z1010914)
n3:cisloPeriodika
11
n3:dodaniDat
n15:2003
n3:domaciTvurceVysledku
n4:3246221 n4:7369123 n4:8935688 n4:3075001 n4:7946279 n4:6156142
n3:druhVysledku
n8:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
708117
n3:idVysledku
RIV/68378271:_____/00:02000429
n3:jazykVysledku
n10:eng
n3:klicovaSlova
N/A
n3:klicoveSlovo
n14:N%2FA
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[5032B6332BC5]
n3:nazevZdroje
Journal of Applied Physics
n3:obor
n18:BM
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
6
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n9:GA202%2F99%2F0410 n9:IAA1010806 n9:IAA1010807
n3:rokUplatneniVysledku
n15:2000
n3:svazekPeriodika
88
n3:tvurceVysledku
Hubík, Pavel Malý, Jan Mareš, Jiří J. Krištofik, Jozef Hulicius, Eduard Pangrác, Jiří
n3:zamer
n16:AV0Z1010914
s:issn
0021-8979
s:numberOfPages
7