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Statements

Subject Item
n2:RIV%2F68378271%3A_____%2F00%3A02000032%21RIV%2F2003%2FAV0%2FA02003%2FN
rdf:type
n16:Vysledek skos:Concept
dcterms:description
Silicon nanocrystals were prepared by Si+-ion implantation and subswquent annealing of SiO2 films thermally grown on a c-Si wafer. It is shown that all PL characteristics (eficiency, dynamics, temperature dependence, excitaqtion spectra) of the Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore are supposed similar PL origin in both materials. Silicon nanocrystals were prepared by Si+-ion implantation and subswquent annealing of SiO2 films thermally grown on a c-Si wafer. It is shown that all PL characteristics (eficiency, dynamics, temperature dependence, excitaqtion spectra) of the Si+-implanted SiO2 films bear close resemblance to those of a light-emitting porous Si and therefore are supposed similar PL origin in both materials.
dcterms:title
Temperature behavior of optical properties of Si + - implanted SiO 2 . Temperature behavior of optical properties of Si + - implanted SiO 2 .
skos:prefLabel
Temperature behavior of optical properties of Si + - implanted SiO 2 . Temperature behavior of optical properties of Si + - implanted SiO 2 .
skos:notation
RIV/68378271:_____/00:02000032!RIV/2003/AV0/A02003/N
n3:strany
395;398
n3:aktivita
n9:Z n9:P
n3:aktivity
P(GA202/98/0669), P(IAA1010809), P(IAB1112901), Z(AV0Z1010914)
n3:cisloPeriodika
N/A
n3:dodaniDat
n17:2003
n3:domaciTvurceVysledku
n7:9441034 n7:1021508 n7:2874717 n7:4331079
n3:druhVysledku
n15:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
728999
n3:idVysledku
RIV/68378271:_____/00:02000032
n3:jazykVysledku
n18:eng
n3:klicovaSlova
N/A
n3:klicoveSlovo
n11:N%2FA
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[9FAF561C2F7C]
n3:nazevZdroje
European Physical Journal. D
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
10
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n10:GA202%2F98%2F0669 n10:IAA1010809 n10:IAB1112901
n3:rokUplatneniVysledku
n17:2000
n3:svazekPeriodika
8
n3:tvurceVysledku
Knápek, Petr Luterová, Kateřina Hönerlage, B. Rehspringer, J. L. Grob, J. J. Pelant, Ivan Valenta, J. Dian, J. Nikl, Martin Muller, D.
n3:zamer
n6:AV0Z1010914
s:issn
1434-6060
s:numberOfPages
4