This HTML5 document contains 36 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n7http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n14http://linked.opendata.cz/resource/domain/vavai/subjekt/
n13http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F68081731%3A_____%2F11%3A00371449%21RIV12-AV0-68081731/
n10http://linked.opendata.cz/ontology/domain/vavai/
n17http://linked.opendata.cz/resource/domain/vavai/zamer/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n8http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n12http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F11%3A00371449%21RIV12-AV0-68081731
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed. Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.
dcterms:title
Mapping of dopants in silicon by injection of electrons Mapping of dopants in silicon by injection of electrons
skos:prefLabel
Mapping of dopants in silicon by injection of electrons Mapping of dopants in silicon by injection of electrons
skos:notation
RIV/68081731:_____/11:00371449!RIV12-AV0-68081731
n10:predkladatel
n14:ico%3A68081731
n3:aktivita
n16:Z
n3:aktivity
Z(AV0Z20650511)
n3:dodaniDat
n12:2012
n3:domaciTvurceVysledku
n7:9000984 n7:5981689 n7:9612653
n3:druhVysledku
n6:O
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
210629
n3:idVysledku
RIV/68081731:_____/11:00371449
n3:jazykVysledku
n9:eng
n3:klicovaSlova
dopant; silicon; scanning electron microscopy
n3:klicoveSlovo
n8:dopant n8:silicon n8:scanning%20electron%20microscopy
n3:kontrolniKodProRIV
[9608A52CF875]
n3:obor
n15:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n12:2011
n3:tvurceVysledku
Konvalina, Ivo Frank, Luděk Mikulík, P. Hovorka, Miloš
n3:zamer
n17:AV0Z20650511