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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F11%3A00367280%21RIV12-AV0-68081731
rdf:type
n13:Vysledek skos:Concept
dcterms:description
Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed. Scanning electron microscope belongs to viable tools for mapping the density of dopants in semiconductors. For probing the silicon structures usually the electron beam is used at energies around 1 keV because of high contrasts between differently doped areas. However, also the very low landing energy range has proven itself an efficient tool for mapping the dopants. We have focused on p-type structures of various dopant densities. Imaging by means of secondary electrons (SE) and its quantifiability has been verified and the method was extended to very low energies where dynamical changes in the contrast have been observed.
dcterms:title
Mapping of dopants in silicon by injection of electrons Mapping of dopants in silicon by injection of electrons
skos:prefLabel
Mapping of dopants in silicon by injection of electrons Mapping of dopants in silicon by injection of electrons
skos:notation
RIV/68081731:_____/11:00367280!RIV12-AV0-68081731
n13:predkladatel
n14:ico%3A68081731
n3:aktivita
n18:P n18:Z
n3:aktivity
P(GAP108/11/2270), P(IAA100650902), Z(AV0Z20650511)
n3:dodaniDat
n7:2012
n3:domaciTvurceVysledku
n17:9612653 n17:5981689 n17:9000984
n3:druhVysledku
n5:D
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n22:predkladatel
n3:idSjednocenehoVysledku
210628
n3:idVysledku
RIV/68081731:_____/11:00367280
n3:jazykVysledku
n4:eng
n3:klicovaSlova
dopant; silicon; scanning electron microscopy
n3:klicoveSlovo
n6:scanning%20electron%20microscopy n6:silicon n6:dopant
n3:kontrolniKodProRIV
[CD407E97DCE6]
n3:mistoKonaniAkce
Kiel
n3:mistoVydani
Kiel
n3:nazevZdroje
MC 2011 - Microscopy Conference Kiel
n3:obor
n12:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:projekt
n8:IAA100650902 n8:GAP108%2F11%2F2270
n3:rokUplatneniVysledku
n7:2011
n3:tvurceVysledku
Mikulík, P. Konvalina, Ivo Hovorka, Miloš Frank, Luděk
n3:typAkce
n21:WRD
n3:zahajeniAkce
2011-08-28+02:00
n3:zamer
n15:AV0Z20650511
s:numberOfPages
2
n19:hasPublisher
DGE
n9:isbn
978-3-00-033910-3