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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F10%3A00350658%21RIV11-GA0-68081731
rdf:type
skos:Concept n21:Vysledek
dcterms:description
Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors. Dopants in silicon structures locally modify the secondary electron emission, revealing in this way their distribution over the sample. Primary electron beam with energy around 1 keV is usually used for probing the doped structures. However, very low landing energy range has proved itself an efficient tool for mapping dopants in semiconductors.
dcterms:title
Mapping of dopants by electron injection Mapping of dopants by electron injection
skos:prefLabel
Mapping of dopants by electron injection Mapping of dopants by electron injection
skos:notation
RIV/68081731:_____/10:00350658!RIV11-GA0-68081731
n3:aktivita
n20:Z n20:P
n3:aktivity
P(GP102/09/P543), P(IAA100650803), Z(AV0Z20650511)
n3:dodaniDat
n15:2011
n3:domaciTvurceVysledku
n11:9612653 n11:9000984 n11:5981689
n3:druhVysledku
n7:D
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
269636
n3:idVysledku
RIV/68081731:_____/10:00350658
n3:jazykVysledku
n10:eng
n3:klicovaSlova
silicon structures; secondary electron emission; very low energy range; mapping dopants
n3:klicoveSlovo
n8:very%20low%20energy%20range n8:silicon%20structures n8:mapping%20dopants n8:secondary%20electron%20emission
n3:kontrolniKodProRIV
[C5EC1FE47F59]
n3:mistoKonaniAkce
Skalský dvůr
n3:mistoVydani
Brno
n3:nazevZdroje
Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation
n3:obor
n4:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n17:GP102%2F09%2FP543 n17:IAA100650803
n3:rokUplatneniVysledku
n15:2010
n3:tvurceVysledku
Konvalina, Ivo Hovorka, Miloš Frank, Luděk
n3:typAkce
n18:WRD
n3:zahajeniAkce
2010-05-31+02:00
n3:zamer
n16:AV0Z20650511
s:numberOfPages
2
n12:hasPublisher
Institute of Scientific Instruments AS CR, v.v.i
n6:isbn
978-80-254-6842-5