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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F09%3A00335263%21RIV10-AV0-68081731
rdf:type
n10:Vysledek skos:Concept
dcterms:description
The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface. The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface.
dcterms:title
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer
skos:prefLabel
Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Secondary electron contrast in doped semiconductor with presence of a surface ad-layer
skos:notation
RIV/68081731:_____/09:00335263!RIV10-AV0-68081731
n3:aktivita
n7:P n7:Z
n3:aktivity
P(GP102/09/P543), P(IAA100650803), Z(AV0Z20650511)
n3:dodaniDat
n8:2010
n3:domaciTvurceVysledku
n15:5981689 n15:9000984 n15:2999625
n3:druhVysledku
n18:D
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
340487
n3:idVysledku
RIV/68081731:_____/09:00335263
n3:jazykVysledku
n21:eng
n3:klicovaSlova
dopant contrast; secondary electrons; semiconductor
n3:klicoveSlovo
n5:semiconductor n5:dopant%20contrast n5:secondary%20electrons
n3:kontrolniKodProRIV
[A885467FACD7]
n3:mistoKonaniAkce
Graz
n3:mistoVydani
Graz
n3:nazevZdroje
MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n16:GP102%2F09%2FP543 n16:IAA100650803
n3:rokUplatneniVysledku
n8:2009
n3:tvurceVysledku
Hovorka, Miloš Mika, Filip Frank, Luděk
n3:typAkce
n19:WRD
n3:zahajeniAkce
2009-08-30+02:00
n3:zamer
n6:AV0Z20650511
s:numberOfPages
2
n17:hasPublisher
Verlag der Technischen Universität
n20:isbn
978-3-85125-062-6