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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F03%3A12030023%21RIV%2F2004%2FAV0%2FA12004%2FN
rdf:type
skos:Concept n18:Vysledek
dcterms:description
In the last two decades the low energy range is employed in the SEM operation for many reasons that include reduced charging of non-conductive specimens, better visualisation of surface relief, larger emitted signals and, at very low energies below 100 eV, new families of image contrasts. While energy around 1 keV is available in SEM of conventional design, extension down to about 200 eV is possible by using a compound objective lens with a retarding field element and very low energies require applying the retarding field directly to the specimen surface in so-called cathode lens [1 to 4]. The cathode lens can be inserted to below the standard objective lens of SEM [3] and most efficient is to use a coaxially positioned single-crystal scintillator disc with small central hole, serving as the anode and detector simultaneously [5]. In this configuration, an arbitrary low impact energy of primary electrons is adjusted by high negative biasing of the specimen. In the last two decades the low energy range is employed in the SEM operation for many reasons that include reduced charging of non-conductive specimens, better visualisation of surface relief, larger emitted signals and, at very low energies below 100 eV, new families of image contrasts. While energy around 1 keV is available in SEM of conventional design, extension down to about 200 eV is possible by using a compound objective lens with a retarding field element and very low energies require applying the retarding field directly to the specimen surface in so-called cathode lens [1 to 4]. The cathode lens can be inserted to below the standard objective lens of SEM [3] and most efficient is to use a coaxially positioned single-crystal scintillator disc with small central hole, serving as the anode and detector simultaneously [5]. In this configuration, an arbitrary low impact energy of primary electrons is adjusted by high negative biasing of the specimen.
dcterms:title
Computer Controlled Low Energy SEM. Computer Controlled Low Energy SEM.
skos:prefLabel
Computer Controlled Low Energy SEM. Computer Controlled Low Energy SEM.
skos:notation
RIV/68081731:_____/03:12030023!RIV/2004/AV0/A12004/N
n3:strany
116 ; 117
n3:aktivita
n7:Z n7:P
n3:aktivity
P(IBS2065017), Z(AV0Z2065902)
n3:cisloPeriodika
Sup. 3
n3:dodaniDat
n16:2004
n3:domaciTvurceVysledku
n8:9000984 n8:7708017 n8:2999625
n3:druhVysledku
n11:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n4:predkladatel
n3:idSjednocenehoVysledku
601928
n3:idVysledku
RIV/68081731:_____/03:12030023
n3:jazykVysledku
n15:eng
n3:klicovaSlova
low energy SEM; scanning electron microscope; non-conductive specimens
n3:klicoveSlovo
n9:low%20energy%20SEM n9:non-conductive%20specimens n9:scanning%20electron%20microscope
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[127A5A0674FE]
n3:nazevZdroje
Microscopy and Microanalysis
n3:obor
n12:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
6
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n17:IBS2065017
n3:rokUplatneniVysledku
n16:2003
n3:svazekPeriodika
9
n3:tvurceVysledku
Frank, Luděk Müllerová, Ilona Zadražil, M. Ryšávka, J. Mika, Filip Lopour, F.
n3:zamer
n14:AV0Z2065902
s:issn
1431-9276
s:numberOfPages
2