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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F02%3A12020159%21RIV%2F2003%2FAV0%2FA12003%2FN
rdf:type
n16:Vysledek skos:Concept
dcterms:description
We present the design of several types of extended-cavity lasers (ECL) based on the Littman.sup.1./sup. configuration and an arrangement for an external stabilizating scheme employing Doppler-free saturation spectroscopy in the molecular iodine. The ECLs followed the requirements of metrological applications where the stress has been put to mechanical stability, thermal control, narrow linewidth and a mode-hop free tuning range. We developed the thechnique of antireflection coatings of the laser diodes front facets which proved to be a crucial step towards the internal cavity suppression and propper operation to the ECL. To control the laser optical frequency an electronics consisting of a precise thermal control and a current source with a protective circuitry was designed. We present the design of several types of extended-cavity lasers (ECL) based on the Littman.sup.1./sup. configuration and an arrangement for an external stabilizating scheme employing Doppler-free saturation spectroscopy in the molecular iodine. The ECLs followed the requirements of metrological applications where the stress has been put to mechanical stability, thermal control, narrow linewidth and a mode-hop free tuning range. We developed the thechnique of antireflection coatings of the laser diodes front facets which proved to be a crucial step towards the internal cavity suppression and propper operation to the ECL. To control the laser optical frequency an electronics consisting of a precise thermal control and a current source with a protective circuitry was designed.
dcterms:title
Extended cavity semiconductor lasers in fundamental metrology. Extended cavity semiconductor lasers in fundamental metrology.
skos:prefLabel
Extended cavity semiconductor lasers in fundamental metrology. Extended cavity semiconductor lasers in fundamental metrology.
skos:notation
RIV/68081731:_____/02:12020159!RIV/2003/AV0/A12003/N
n3:strany
132 ; 138
n3:aktivita
n6:Z n6:P
n3:aktivity
P(GA101/01/1104), P(IAB2065001), P(IBS2065009), Z(AV0Z2065902)
n3:dodaniDat
n11:2003
n3:domaciTvurceVysledku
n4:5467853 n4:5218497 n4:9233598 n4:9837914
n3:druhVysledku
n15:D
n3:duvernostUdaju
n21:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
645874
n3:idVysledku
RIV/68081731:_____/02:12020159
n3:jazykVysledku
n13:eng
n3:klicovaSlova
semiconductor lasers; frequency stabilization; absorption spectroscopy
n3:klicoveSlovo
n7:semiconductor%20lasers n7:absorption%20spectroscopy n7:frequency%20stabilization
n3:kontrolniKodProRIV
[8CBEF9D80F54]
n3:mistoKonaniAkce
Novosibirsk [RU]
n3:mistoVydani
Novosibirsk
n3:nazevZdroje
Proceedings of SPIE - The International society for optical engineering.
n3:obor
n12:BH
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n14:GA101%2F01%2F1104 n14:IAB2065001 n14:IBS2065009
n3:rokUplatneniVysledku
n11:2002
n3:tvurceVysledku
Číp, Ondřej Lazar, Josef Růžička, Bohdan Jedlička, Petr
n3:typAkce
n19:WRD
n3:zahajeniAkce
2002-09-09+02:00
n3:zamer
n18:AV0Z2065902
s:numberOfPages
7
n8:hasPublisher
SPIE
n20:isbn
0-8194-4686-6