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Statements

Subject Item
n2:RIV%2F68081731%3A_____%2F01%3A12010016%21RIV%2F2003%2FAV0%2FA12003%2FN
rdf:type
n14:Vysledek skos:Concept
dcterms:description
A method for scanning electron microscopy imaging of nonconductive specimens, based on measurement and utilisation of a critical energy, is described in detail together with examples of its application. The critical energy, at which the total electron yield curve crosses the unit level, is estimated on the basis of measurement of the image signal development from the beginning of irradiation. This approach, concentrated onto the detected signal as the only quantity crucial for the given purpose of acquiring a noncharged micrograph, evades consequences of any changes in an irradiated specimen that influence the total electron yield curve and possibly also the critical energy value. Implementation of the automated method, realised using a cathode lens-equipped scanning electron microsope (SEM), enables one to establish a mean rate of charging over the field of view and its dependence on the electron landing energy. This dependence enables one to determine the energy of a minimum damage of the image of t A method for scanning electron microscopy imaging of nonconductive specimens, based on measurement and utilisation of a critical energy, is described in detail together with examples of its application. The critical energy, at which the total electron yield curve crosses the unit level, is estimated on the basis of measurement of the image signal development from the beginning of irradiation. This approach, concentrated onto the detected signal as the only quantity crucial for the given purpose of acquiring a noncharged micrograph, evades consequences of any changes in an irradiated specimen that influence the total electron yield curve and possibly also the critical energy value. Implementation of the automated method, realised using a cathode lens-equipped scanning electron microsope (SEM), enables one to establish a mean rate of charging over the field of view and its dependence on the electron landing energy. This dependence enables one to determine the energy of a minimum damage of the image of t
dcterms:title
Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System. Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System.
skos:prefLabel
Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System. Scanning Electron Microscopy of Nonconductive Specimens at Critical Energies in a Cathode Lens System.
skos:notation
RIV/68081731:_____/01:12010016!RIV/2003/AV0/A12003/N
n3:strany
36;50
n3:aktivita
n7:Z n7:P
n3:aktivity
P(GA202/96/0961), P(GA202/99/0008), Z(AV0Z2065902)
n3:cisloPeriodika
1
n3:dodaniDat
n18:2003
n3:domaciTvurceVysledku
n4:7708017 n4:6680836 n4:9000984
n3:druhVysledku
n10:J
n3:duvernostUdaju
n5:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
695265
n3:idVysledku
RIV/68081731:_____/01:12010016
n3:jazykVysledku
n15:eng
n3:klicovaSlova
scanning electron microscopy; specimen charging; nonconductive specimens
n3:klicoveSlovo
n6:nonconductive%20specimens n6:scanning%20electron%20microscopy n6:specimen%20charging
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[2F13EA15A518]
n3:nazevZdroje
Scanning
n3:obor
n13:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n12:GA202%2F96%2F0961 n12:GA202%2F99%2F0008
n3:rokUplatneniVysledku
n18:2001
n3:svazekPeriodika
23
n3:tvurceVysledku
Müllerová, Ilona Frank, Luděk Zadražil, Martin
n3:zamer
n17:AV0Z2065902
s:issn
0161-0457
s:numberOfPages
15