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Statements

Subject Item
n2:RIV%2F68081723%3A_____%2F11%3A00371107%21RIV12-AV0-68081723
rdf:type
skos:Concept n10:Vysledek
dcterms:description
The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement. The results of a study of oxide precipitates in Czochralski (CZ) grown silicon using two X-ray diffraction methods are reported. The diffuse scattering around the Bragg diffraction maxima was measured on a series of samples after various two-stage annealing treatment. Combining the analysis of diffuse scattering with other experimental techniques we were able to determine mean precipitate size and deformation field around the precipitates. The obtained data show that the deformation field is proportional to the precipitate volume and independent on the annealing temperature or annealing time. The dynamical diffraction in Laue geometry was used to measure precipitate concentration. The results are compared to the selective etching concentration measurement.
dcterms:title
Study of oxide precipitates in silicon using X-ray diffraction techniques Study of oxide precipitates in silicon using X-ray diffraction techniques
skos:prefLabel
Study of oxide precipitates in silicon using X-ray diffraction techniques Study of oxide precipitates in silicon using X-ray diffraction techniques
skos:notation
RIV/68081723:_____/11:00371107!RIV12-AV0-68081723
n10:predkladatel
n11:ico%3A68081723
n3:aktivita
n12:Z n12:S n12:P
n3:aktivity
P(GA202/09/1013), P(GP202/09/P410), S, Z(AV0Z20410507), Z(MSM0021622410)
n3:cisloPeriodika
11
n3:dodaniDat
n15:2012
n3:domaciTvurceVysledku
n18:6334008 n18:8093326
n3:druhVysledku
n17:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
233093
n3:idVysledku
RIV/68081723:_____/11:00371107
n3:jazykVysledku
n16:eng
n3:klicovaSlova
high-resolution X-ray diffraction; oxide precipitates; silicon
n3:klicoveSlovo
n7:silicon n7:oxide%20precipitates n7:high-resolution%20X-ray%20diffraction
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[3844E0B7C0CD]
n3:nazevZdroje
Physica Status Solidi. A
n3:obor
n19:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n9:GA202%2F09%2F1013 n9:GP202%2F09%2FP410
n3:rokUplatneniVysledku
n15:2011
n3:svazekPeriodika
208
n3:tvurceVysledku
Meduňa, M. Svoboda, Milan Bernatová, S. Buršík, Jiří Caha, O.
n3:wos
000297514200018
n3:zamer
n8:MSM0021622410 n8:AV0Z20410507
s:issn
1862-6300
s:numberOfPages
4