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Statements

Subject Item
n2:RIV%2F68081723%3A_____%2F03%3A07033166%21RIV%2F2004%2FAV0%2FA07004%2FN
rdf:type
skos:Concept n14:Vysledek
dcterms:description
The diffusion of Ge, simulationg the diffusion of Si was studied in eutectic Fe-Nb, in iron and in the Fe2Nb compound, which models the Nb-rich envelope of growing FexSi crystallites in FINEMETs. The diffusion of Ge, simulationg the diffusion of Si was studied in eutectic Fe-Nb, in iron and in the Fe2Nb compound, which models the Nb-rich envelope of growing FexSi crystallites in FINEMETs.
dcterms:title
Modeling of diffusion barrier in nanocrystalline growth. Modeling of diffusion barrier in nanocrystalline growth.
skos:prefLabel
Modeling of diffusion barrier in nanocrystalline growth. Modeling of diffusion barrier in nanocrystalline growth.
skos:notation
RIV/68081723:_____/03:07033166!RIV/2004/AV0/A07004/N
n3:strany
232;235
n3:aktivita
n11:P n11:Z
n3:aktivity
P(GA106/01/0384), P(IBS2041105), Z(AV0Z2041904)
n3:dodaniDat
n13:2004
n3:domaciTvurceVysledku
n4:6514553 n4:8032564
n3:druhVysledku
n7:D
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n20:predkladatel
n3:idSjednocenehoVysledku
615841
n3:idVysledku
RIV/68081723:_____/03:07033166
n3:jazykVysledku
n5:eng
n3:klicovaSlova
FINEMET; Ge diffusion; nanocrystalline growth
n3:klicoveSlovo
n10:FINEMET n10:nanocrystalline%20growth n10:Ge%20diffusion
n3:kontrolniKodProRIV
[A784A5C7CAC3]
n3:mistoKonaniAkce
Brno [CZ]
n3:mistoVydani
Brno
n3:nazevZdroje
NANO 03.
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
2
n3:pocetUcastnikuAkce
0
n3:pocetZahranicnichUcastnikuAkce
0
n3:projekt
n9:GA106%2F01%2F0384 n9:IBS2041105
n3:rokUplatneniVysledku
n13:2003
n3:tvurceVysledku
Rothová, Věra Čermák, Jiří
n3:typAkce
n12:WRD
n3:zahajeniAkce
2003-10-21+02:00
n3:zamer
n18:AV0Z2041904
s:numberOfPages
4
n21:hasPublisher
Vysoké učení technické v Brně. Fakulta strojního inženýrství
n17:isbn
80-214-2527-X