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Statements

Subject Item
n2:RIV%2F67985882%3A_____%2F14%3A00428559%21RIV15-AV0-67985882
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time Electrical properties of highly rectifying Pt/InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT/q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time
dcterms:title
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
skos:prefLabel
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
skos:notation
RIV/67985882:_____/14:00428559!RIV15-AV0-67985882
n3:aktivita
n13:I n13:P
n3:aktivity
I, P(LD12014)
n3:cisloPeriodika
4
n3:dodaniDat
n4:2015
n3:domaciTvurceVysledku
n7:4722078 Yatskiv, Roman n7:2267659
n3:druhVysledku
n15:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
51105
n3:idVysledku
RIV/67985882:_____/14:00428559
n3:jazykVysledku
n12:eng
n3:klicovaSlova
electrophoretic deposition; Pt nanoparticles; Schottky diodes
n3:klicoveSlovo
n8:electrophoretic%20deposition n8:Schottky%20diodes n8:Pt%20nanoparticles
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[586AB566CEA8]
n3:nazevZdroje
Semiconductor Science and Technology
n3:obor
n18:JA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
8
n3:projekt
n17:LD12014
n3:rokUplatneniVysledku
n4:2014
n3:svazekPeriodika
29
n3:tvurceVysledku
Yatskiv, Roman Černohorský, Ondřej Maryanchuk, P. D. Grym, Jan Komninou, Ph. Bazioti, C. Brus, V. V. Dimitrakopulos, G. P.
n3:wos
000333275600019
s:issn
0268-1242
s:numberOfPages
8
n14:doi
10.1088/0268-1242/29/4/045017